{"title":"7.3%高效CuInSe/ sub2 /太阳能电池","authors":"K. Mitchell, G. Pollock, A. Mason","doi":"10.1109/PVSC.1988.105967","DOIUrl":null,"url":null,"abstract":"A 7.3%, 3.3 cm/sup 2/ active area efficient ZnO/thin CdS/CuInS/sub 2/ solar cell is demonstrated with 22.7 mA/cm/sup 2/ J/sub sc/, 592 mV V/sub oc/, and 0.546 fill factor. X-ray diffraction shows that the CuInS/sub 2/ films with are predominantly randomly oriented chalcopyrite CuInS/sub 2/ with additional minor phases such as In/sub 2/S/sub 3/ and Cu/sub 2-x/S present. Optical transmission and reflection data for CuInS/sub 2/ films on glass are also shown. Optical transmission implies a 1.4-eV bandgap, less than the 1.55-eV bandgap for single-crystal CuInS/sub 2/, but consistent with other reported thin-film results. It is concluded that the resolution of several materials, device, and fabrication issues will result in efficiencies of greater than 15%.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"1542-1544 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"7.3% efficient CuInSe/sub 2/ solar cell\",\"authors\":\"K. Mitchell, G. Pollock, A. Mason\",\"doi\":\"10.1109/PVSC.1988.105967\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 7.3%, 3.3 cm/sup 2/ active area efficient ZnO/thin CdS/CuInS/sub 2/ solar cell is demonstrated with 22.7 mA/cm/sup 2/ J/sub sc/, 592 mV V/sub oc/, and 0.546 fill factor. X-ray diffraction shows that the CuInS/sub 2/ films with are predominantly randomly oriented chalcopyrite CuInS/sub 2/ with additional minor phases such as In/sub 2/S/sub 3/ and Cu/sub 2-x/S present. Optical transmission and reflection data for CuInS/sub 2/ films on glass are also shown. Optical transmission implies a 1.4-eV bandgap, less than the 1.55-eV bandgap for single-crystal CuInS/sub 2/, but consistent with other reported thin-film results. It is concluded that the resolution of several materials, device, and fabrication issues will result in efficiencies of greater than 15%.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"1 1\",\"pages\":\"1542-1544 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105967\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 7.3%, 3.3 cm/sup 2/ active area efficient ZnO/thin CdS/CuInS/sub 2/ solar cell is demonstrated with 22.7 mA/cm/sup 2/ J/sub sc/, 592 mV V/sub oc/, and 0.546 fill factor. X-ray diffraction shows that the CuInS/sub 2/ films with are predominantly randomly oriented chalcopyrite CuInS/sub 2/ with additional minor phases such as In/sub 2/S/sub 3/ and Cu/sub 2-x/S present. Optical transmission and reflection data for CuInS/sub 2/ films on glass are also shown. Optical transmission implies a 1.4-eV bandgap, less than the 1.55-eV bandgap for single-crystal CuInS/sub 2/, but consistent with other reported thin-film results. It is concluded that the resolution of several materials, device, and fabrication issues will result in efficiencies of greater than 15%.<>
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