高填充因子，突发帧率电荷耦合器件

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1117/12.520901

R. Reich, D. O'Mara, D. Young, A. Loomis, D. Rathman, D. Craig, S. Watson, M. Ulibarri, B. Kosicki

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引用次数: 4

摘要

开发了一种512/spl次/512元的多帧电荷耦合器件(CCD)，用于以兆赫兹速率采集4个连续图像帧。为了在高灵敏度的快速帧率下工作，成像仪使用了为背光ccd开发的电子快门技术。兆赫帧率也需要金属带的多晶硅栅电极。经过测试的成像仪已经展示了多帧捕获能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-fill-factor, burst-frame-rate charge-coupled device

A 512/spl times/512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. The megahertz frame rates also required metal strapping of the polysilicon gate electrodes. Tested imagers have demonstrated multi-frame capture capability.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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