D. Shen, J. Conde, V. Chu, J.Z. Liu, A. Maruyama, S. Aljishi, Z. Smith, S. Wagner
{"title":"SiGe中的悬垂键态:H,F由温度相关的mu tau测量","authors":"D. Shen, J. Conde, V. Chu, J.Z. Liu, A. Maruyama, S. Aljishi, Z. Smith, S. Wagner","doi":"10.1109/PVSC.1988.105673","DOIUrl":null,"url":null,"abstract":"The authors report a novel technique for measuring the density distribution of the D/sup 0/-/ state in a-Si:H before and after light soaking and in a-SiGe:H,F alloys for solar cells. Electron time-of-flight (TOF) measurements as a function of temperature form the basis of this technique. The deep trapping of electrons controls the mobility-lifetime product ( mu tau )/sub n/, which is evaluated from the integrated TOF current. The dominant deep trap is the D/sup 0/-/ level. The authors determine the density of D/sup 0/-/ states in a:SiGe:H,F that peak at SiE/sub c/-(0.40 to 0.45) eV with maxima in the 10/sup 18/ to 10/sup 19/-cm/sup -3/ eV/sup -1/ range. In a-Si:H, the peak lies at E/sub c/-0.45 eV; it is observed to grow with increasing light-soaking time.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"24 1","pages":"135-138 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dangling-bond states in a SiGe:H,F measured by temperature-dependent mu tau\",\"authors\":\"D. Shen, J. Conde, V. Chu, J.Z. Liu, A. Maruyama, S. Aljishi, Z. Smith, S. Wagner\",\"doi\":\"10.1109/PVSC.1988.105673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors report a novel technique for measuring the density distribution of the D/sup 0/-/ state in a-Si:H before and after light soaking and in a-SiGe:H,F alloys for solar cells. Electron time-of-flight (TOF) measurements as a function of temperature form the basis of this technique. The deep trapping of electrons controls the mobility-lifetime product ( mu tau )/sub n/, which is evaluated from the integrated TOF current. The dominant deep trap is the D/sup 0/-/ level. The authors determine the density of D/sup 0/-/ states in a:SiGe:H,F that peak at SiE/sub c/-(0.40 to 0.45) eV with maxima in the 10/sup 18/ to 10/sup 19/-cm/sup -3/ eV/sup -1/ range. In a-Si:H, the peak lies at E/sub c/-0.45 eV; it is observed to grow with increasing light-soaking time.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"24 1\",\"pages\":\"135-138 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dangling-bond states in a SiGe:H,F measured by temperature-dependent mu tau
The authors report a novel technique for measuring the density distribution of the D/sup 0/-/ state in a-Si:H before and after light soaking and in a-SiGe:H,F alloys for solar cells. Electron time-of-flight (TOF) measurements as a function of temperature form the basis of this technique. The deep trapping of electrons controls the mobility-lifetime product ( mu tau )/sub n/, which is evaluated from the integrated TOF current. The dominant deep trap is the D/sup 0/-/ level. The authors determine the density of D/sup 0/-/ states in a:SiGe:H,F that peak at SiE/sub c/-(0.40 to 0.45) eV with maxima in the 10/sup 18/ to 10/sup 19/-cm/sup -3/ eV/sup -1/ range. In a-Si:H, the peak lies at E/sub c/-0.45 eV; it is observed to grow with increasing light-soaking time.<>
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