记录47mv /dec自上而下垂直纳米线InGaAs/GaAsSb隧道场效应管

2018 IEEE Symposium on VLSI Technology Pub Date : 2018-06-01 DOI:10.1109/VLSIT.2018.8510619

A. Alian, S. E. Kazzi, A. Verhulst, A. Milenin, N. Pinna, T. Ivanov, D. Lin, D. Mocuta, N. Collaert

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引用次数: 10

摘要

实验证明了垂直纳米线InGaAs/GaAsSb隧道场效应管(TFET)的亚阈值摆幅(SS)可达47 mV/dec。实现的亚阈值性能是迄今为止报道的在III-V材料系统中自上而下的ttfet中最陡峭的。使用基于CH4的干蚀刻工艺实现直径窄至30纳米的光滑垂直线。当电源电压为0.35 V时，驱动电流接近0.7 μA/μm，固定开关电压为1na /μm。

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Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs

Pocketed vertical nanowire InGaAs/GaAsSb tunnel FETs (TFET) with sub-threshold swing (SS) reaching 47 mV/dec are demonstrated. The achieved sub-threshold performance is the steepest reported so far for a top-down TFET in the III-V material system. Smooth vertical wires with diameters as narrow as 30 nm are achieved using a CH4 based dry etch process. Drive current at 0.35 V supply voltage approaches 0.7 μA/μm for a fixed Ioff of 1 nA/μm.

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2018 IEEE Symposium on VLSI Technology

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