{"title":"化学NiP镀层/Cu衬底与SnAg焊料的润湿相互作用","authors":"Pei-Lun Hsieh, Kwang-Lung Lin","doi":"10.1109/IMPACT.2011.6117224","DOIUrl":null,"url":null,"abstract":"Electroless NiP deposit has been frequently mentioned as the barrier laer for Cu substrate or metallization for the soldering process. The NiP deposit is solderable with many solders at appropriate temperature and operation condition. The present study attempted to investigate the wetting behavior of the Sn3Ag solder on the electroless NiP with wetting balance at 250°C and 270°C. The cross section of the wetting specimen was further investigated for the interaction and the interfacial microstructure between the solder and the NiP/Cu substrate. The interface was composed of Ni3Sn4 and Ni3P compound layers. A Ni-Sn-P layer was detected between these two compound layers. The thickness of these layers was analyzed for the growth kinetics. The growth of these layers were found to follow an empirical power law log h(thickness) = log k(constant) + n log t(time). The variation in n values was discussed in relating to the growth mechanism of these two layers.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"84 1","pages":"29-32"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The wetting interaction between electroless NiP deposit/Cu substrate and SnAg solder\",\"authors\":\"Pei-Lun Hsieh, Kwang-Lung Lin\",\"doi\":\"10.1109/IMPACT.2011.6117224\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electroless NiP deposit has been frequently mentioned as the barrier laer for Cu substrate or metallization for the soldering process. The NiP deposit is solderable with many solders at appropriate temperature and operation condition. The present study attempted to investigate the wetting behavior of the Sn3Ag solder on the electroless NiP with wetting balance at 250°C and 270°C. The cross section of the wetting specimen was further investigated for the interaction and the interfacial microstructure between the solder and the NiP/Cu substrate. The interface was composed of Ni3Sn4 and Ni3P compound layers. A Ni-Sn-P layer was detected between these two compound layers. The thickness of these layers was analyzed for the growth kinetics. The growth of these layers were found to follow an empirical power law log h(thickness) = log k(constant) + n log t(time). The variation in n values was discussed in relating to the growth mechanism of these two layers.\",\"PeriodicalId\":6360,\"journal\":{\"name\":\"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)\",\"volume\":\"84 1\",\"pages\":\"29-32\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMPACT.2011.6117224\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT.2011.6117224","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
化学NiP镀层作为铜衬底的阻挡层或焊接过程中的金属化层经常被提及。在适当的温度和操作条件下,可与多个焊料进行焊接。在250°C和270°C条件下,研究了Sn3Ag钎料在化学NiP上的润湿行为。进一步研究了润湿试样的横截面,以研究焊料与NiP/Cu衬底之间的相互作用和界面微观结构。界面由Ni3Sn4和Ni3P复合层组成。在这两个复合层之间检测到Ni-Sn-P层。对这些层的厚度进行了生长动力学分析。发现这些层的生长遵循经验幂律log h(厚度)= log k(常数)+ n log t(时间)。讨论了n值的变化与这两层生长机制的关系。
The wetting interaction between electroless NiP deposit/Cu substrate and SnAg solder
Electroless NiP deposit has been frequently mentioned as the barrier laer for Cu substrate or metallization for the soldering process. The NiP deposit is solderable with many solders at appropriate temperature and operation condition. The present study attempted to investigate the wetting behavior of the Sn3Ag solder on the electroless NiP with wetting balance at 250°C and 270°C. The cross section of the wetting specimen was further investigated for the interaction and the interfacial microstructure between the solder and the NiP/Cu substrate. The interface was composed of Ni3Sn4 and Ni3P compound layers. A Ni-Sn-P layer was detected between these two compound layers. The thickness of these layers was analyzed for the growth kinetics. The growth of these layers were found to follow an empirical power law log h(thickness) = log k(constant) + n log t(time). The variation in n values was discussed in relating to the growth mechanism of these two layers.