具有主动电压控制的SiC mosfet串联

P. Palmer, Jin Zhang, Xueqiang Zhang
{"title":"具有主动电压控制的SiC mosfet串联","authors":"P. Palmer, Jin Zhang, Xueqiang Zhang","doi":"10.1109/WIPDA.2015.7369274","DOIUrl":null,"url":null,"abstract":"Silicon Carbide (SiC) MOSFETs offer rapid switching and low on-state voltages. Connecting SiC MOSFETs in series will enable high voltage high frequency applications. Nonetheless, the output capacitances of SiC MOSFETs are often found to ring with the significant stray inductance inevitably found in circuits with series connected devices. The active voltage control gate drive method is used here to clamp the MOSFET voltages to ensure low and stable overshoot voltages, good voltage balancement and a near ideal turn on. It is concluded that SiC MOSFETs and SiC diodes may be connected in series with significant advantages compared to Silicon (Si) IGBTs and Si diode technologies, and the benefits may be realized with the use of active voltage control.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"8 1","pages":"60-65"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"SiC MOSFETs connected in series with active voltage control\",\"authors\":\"P. Palmer, Jin Zhang, Xueqiang Zhang\",\"doi\":\"10.1109/WIPDA.2015.7369274\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon Carbide (SiC) MOSFETs offer rapid switching and low on-state voltages. Connecting SiC MOSFETs in series will enable high voltage high frequency applications. Nonetheless, the output capacitances of SiC MOSFETs are often found to ring with the significant stray inductance inevitably found in circuits with series connected devices. The active voltage control gate drive method is used here to clamp the MOSFET voltages to ensure low and stable overshoot voltages, good voltage balancement and a near ideal turn on. It is concluded that SiC MOSFETs and SiC diodes may be connected in series with significant advantages compared to Silicon (Si) IGBTs and Si diode technologies, and the benefits may be realized with the use of active voltage control.\",\"PeriodicalId\":6538,\"journal\":{\"name\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"8 1\",\"pages\":\"60-65\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2015.7369274\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2015.7369274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21

摘要

碳化硅(SiC) mosfet提供快速开关和低导通状态电压。串联SiC mosfet将实现高压高频应用。尽管如此,SiC mosfet的输出电容经常被发现与串联器件电路中不可避免地发现的显著杂散电感相环。主动电压控制栅极驱动方法用于箝位MOSFET电压,以确保低而稳定的过调电压,良好的电压平衡和接近理想的导通。与硅(Si) igbt和硅二极管技术相比,SiC mosfet和SiC二极管串联具有显著的优势,并且可以通过使用有源电压控制来实现这种优势。
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SiC MOSFETs connected in series with active voltage control
Silicon Carbide (SiC) MOSFETs offer rapid switching and low on-state voltages. Connecting SiC MOSFETs in series will enable high voltage high frequency applications. Nonetheless, the output capacitances of SiC MOSFETs are often found to ring with the significant stray inductance inevitably found in circuits with series connected devices. The active voltage control gate drive method is used here to clamp the MOSFET voltages to ensure low and stable overshoot voltages, good voltage balancement and a near ideal turn on. It is concluded that SiC MOSFETs and SiC diodes may be connected in series with significant advantages compared to Silicon (Si) IGBTs and Si diode technologies, and the benefits may be realized with the use of active voltage control.
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