Normal incidence intersubband absorption in InGaAs quantum wells

L. Peng, C. Fonstad
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Abstract

Multiple quantum well (MQW) C/sub 1/-to-C/sub 2/ intersubband transitions between quantized states in the QW conduction band are discussed. The Si-doped InAlAs/InGaAs MQW samples used in this study were grown by molecular beam epitaxy. The polarization activity of intersubband transitions is considered. The interest of this work is to (i) experimentally retrieve the correct polarization selection rules for intersubband transitions by devising polarization-resolved and angle-resolved IR measurement techniques, and (ii) theoretically develop a new model that fully explains the features of selection rules, absorption strength, and the splitting of the experimental observations.<>
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InGaAs量子阱中的正入射子带间吸收
讨论了量子阱传导带中量子化态之间的C/sub 1/到C/sub 2/子带间跃迁。采用分子束外延法制备了掺杂si的InAlAs/InGaAs MQW样品。考虑了子带间跃迁的极化活度。这项工作的兴趣在于:(1)通过设计偏振分辨和角度分辨红外测量技术,从实验上检索子带间跃迁的正确偏振选择规则;(2)从理论上建立一个新的模型,充分解释选择规则、吸收强度和实验观测的分裂的特征
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Normal incidence intersubband absorption in InGaAs quantum wells Interdiffusion of InGaAs/InGaAsP quantum wells GaInP/GaAs HBTs for microwave applications First fabrication of continuously graded InGaAsP on GaAs for 0.98/spl mu/m lasers Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p/sup -/-n/sup -/ collector structure
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