Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380549
C. Tu
P-type carbon-doped In/sub 0.53/Ga/sub 0.47/As grown by various epitaxial techniques is reviewed. High hole concentrations in In/sub 0.53/Ga/sub 0.47/As can be achieved by using CCl/sub 4/ or CBr/sub 4/ as the carbon doping source. The highest hole concentration so far is 9 /spl times/ 10/sup 19/ cm/sup -3/ by gas-source molecular beam epitaxy with CBr/sub 4/. Results of InP/In/sub 0.53/Ga/sub 0.47/A single and double heterojunction bipolar transistors are summarized.<>
{"title":"Carbon-doped p-type In/sub 0.53/Ga/sub 0.47/As and its application to InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors","authors":"C. Tu","doi":"10.1109/ICIPRM.1993.380549","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380549","url":null,"abstract":"P-type carbon-doped In/sub 0.53/Ga/sub 0.47/As grown by various epitaxial techniques is reviewed. High hole concentrations in In/sub 0.53/Ga/sub 0.47/As can be achieved by using CCl/sub 4/ or CBr/sub 4/ as the carbon doping source. The highest hole concentration so far is 9 /spl times/ 10/sup 19/ cm/sup -3/ by gas-source molecular beam epitaxy with CBr/sub 4/. Results of InP/In/sub 0.53/Ga/sub 0.47/A single and double heterojunction bipolar transistors are summarized.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124421391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380696
R. Schnabel, F. Heinrichsdorff, A. Krost, M. Grundmann, T. Wolf, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde
Metal organic chemical vapor deposition of undoped and Fe-doped InP on vicinal Si[001] and Si(111) is reported. Semi-insulating InP on Si(111) with a resistivity of 3 /spl times/ 10/sup 7/ /spl Omega/cm has been made for the first time. The resistivity increases with decreasing defect density in the InP:Fe epitaxial layers. In InP/Si(111), a considerable reduction of crystal defects by one order of magnitude was found as compared to InP/Si[001]. In consequence, the undesired defect induced effects of strong Si incorporation and incorporation of electrically inactive Fe are almost suppressed.<>
{"title":"Semi-insulating InP:Fe grown on Si","authors":"R. Schnabel, F. Heinrichsdorff, A. Krost, M. Grundmann, T. Wolf, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde","doi":"10.1109/ICIPRM.1993.380696","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380696","url":null,"abstract":"Metal organic chemical vapor deposition of undoped and Fe-doped InP on vicinal Si[001] and Si(111) is reported. Semi-insulating InP on Si(111) with a resistivity of 3 /spl times/ 10/sup 7/ /spl Omega/cm has been made for the first time. The resistivity increases with decreasing defect density in the InP:Fe epitaxial layers. In InP/Si(111), a considerable reduction of crystal defects by one order of magnitude was found as compared to InP/Si[001]. In consequence, the undesired defect induced effects of strong Si incorporation and incorporation of electrically inactive Fe are almost suppressed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121061532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380631
M. Hashemi, J. Shealy, S. Denbaars, U. Mishra
The authors report the power performance of a novel InP junction field-effect transistor (JFET) with a p/sup +/-GaInAs heterostructure gate (HJFET). The HJFET structure was grown by non-hydride metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure and at a substrate temperature of 560/spl deg/C using tertiarybutylphosphine, tertiarybutylarsine as the alternative sources for phosphine and arsine, respectively. p/sup +/ GaInAs was used as the gate material, and n InP as the channel. It is shown that both epitaxial layer design, and device geometry play an important role in device performance. HJFETs with superior performance, an easier fabrication process, and scalability to sub-micron gate lengths compared to homojunction JFETs have been demonstrated.<>
{"title":"High power novel heterojunction JFETs (HJFETs) grown by MOCVD","authors":"M. Hashemi, J. Shealy, S. Denbaars, U. Mishra","doi":"10.1109/ICIPRM.1993.380631","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380631","url":null,"abstract":"The authors report the power performance of a novel InP junction field-effect transistor (JFET) with a p/sup +/-GaInAs heterostructure gate (HJFET). The HJFET structure was grown by non-hydride metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure and at a substrate temperature of 560/spl deg/C using tertiarybutylphosphine, tertiarybutylarsine as the alternative sources for phosphine and arsine, respectively. p/sup +/ GaInAs was used as the gate material, and n InP as the channel. It is shown that both epitaxial layer design, and device geometry play an important role in device performance. HJFETs with superior performance, an easier fabrication process, and scalability to sub-micron gate lengths compared to homojunction JFETs have been demonstrated.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127434150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380656
X. An, H. Temkin, A. Feygenson, R. Hamm, M. Cotta, R. Logan, D. Coblentz
The authors describe the use of selective area epitaxy to prepare monolithically integrated lasers and heterostructure bipolar transistors (HBTs) based on InGaAs(P)/InP. The laser is a capped mesa buried heterostructure structure grown by metal-organic chemical vapor deposition (MOCVD) and optimized for fiber communications. The HBT structures were grown by metal-organic molecular beam epitaxy (MOMBE) on the semi-insulating current confining layers of the lasers. The quality of selectively grown HBTs is illustrated in the Gummel plot and common emitter output characteristics. The DC performance of an integrated structure is illustrated. The laser is driven with the collector current of the HBT. Threshold is achieved at a base current of I/sub B/=360 /spl mu/A. Light output of the laser is linear to at least 10 mW. Preliminary experiments show the bandwidth of the integrated device to be in excess of 3 GHz.<>
{"title":"Monolithic integration of lasers and bipolar transistors by selective area epitaxy","authors":"X. An, H. Temkin, A. Feygenson, R. Hamm, M. Cotta, R. Logan, D. Coblentz","doi":"10.1109/ICIPRM.1993.380656","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380656","url":null,"abstract":"The authors describe the use of selective area epitaxy to prepare monolithically integrated lasers and heterostructure bipolar transistors (HBTs) based on InGaAs(P)/InP. The laser is a capped mesa buried heterostructure structure grown by metal-organic chemical vapor deposition (MOCVD) and optimized for fiber communications. The HBT structures were grown by metal-organic molecular beam epitaxy (MOMBE) on the semi-insulating current confining layers of the lasers. The quality of selectively grown HBTs is illustrated in the Gummel plot and common emitter output characteristics. The DC performance of an integrated structure is illustrated. The laser is driven with the collector current of the HBT. Threshold is achieved at a base current of I/sub B/=360 /spl mu/A. Light output of the laser is linear to at least 10 mW. Preliminary experiments show the bandwidth of the integrated device to be in excess of 3 GHz.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125929741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380630
Z. Zou, D. Lile
Summary form only given. To study surface-related scattering mechanisms in InP the authors have fabricated and characterized enhancement mode metal-insulator-semiconductor FETs (MISFETs) on commercially available SI material as well as accumulation mode devices on n-type gas source molecular beam epitaxy grown epitaxial n-type material. In all cases the gate insulator was SiO/sub 2/ deposited by low-pressure, indirect plasma enhanced chemical vapor deposition over the temperature range from /spl sim/175 to 275K. Experimental results obtained on both types of FET have included field effect and effective mobility values measured as a function of channel carrier density and temperature, over the range from /spl sim/77 to 300 K, and as a function of dielectric growth temperature. To elucidate the dominant scattering mechanisms in these devices, the surface transport was modeled by including, in addition to the standard bulk scattering processes, the effects of surface roughness, interfacial charge, and neutral surface impurity scattering. The results of surface mobility studies are presented, including the fitting of the experimental mobility data to the theory.<>
{"title":"Transport of electrons in the near-surface region of InP","authors":"Z. Zou, D. Lile","doi":"10.1109/ICIPRM.1993.380630","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380630","url":null,"abstract":"Summary form only given. To study surface-related scattering mechanisms in InP the authors have fabricated and characterized enhancement mode metal-insulator-semiconductor FETs (MISFETs) on commercially available SI material as well as accumulation mode devices on n-type gas source molecular beam epitaxy grown epitaxial n-type material. In all cases the gate insulator was SiO/sub 2/ deposited by low-pressure, indirect plasma enhanced chemical vapor deposition over the temperature range from /spl sim/175 to 275K. Experimental results obtained on both types of FET have included field effect and effective mobility values measured as a function of channel carrier density and temperature, over the range from /spl sim/77 to 300 K, and as a function of dielectric growth temperature. To elucidate the dominant scattering mechanisms in these devices, the surface transport was modeled by including, in addition to the standard bulk scattering processes, the effects of surface roughness, interfacial charge, and neutral surface impurity scattering. The results of surface mobility studies are presented, including the fitting of the experimental mobility data to the theory.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126618349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380723
A. Hadjifotiou
Summary form only given. The author summarizes briefly the current network requirements and outlines the characteristics of the InP devices that are used. Secondly the future information requirements and possible broadband network configurations suitable for time or wavelength division multiplexing are introduced and their requirements and possible broadband network configurations suitable for time or wavelength division multiplexing are introduced and their requirements in terms of devices are analyzed. The focus is on InP devices that can satisfy the system requirements. Five critical areas where InP technology can be used with substantial advantages for future communications are reviewed. An outline of the RACE program is given that is addressing the basic technology and device design problems of the InP technology.<>
{"title":"The role of InP technology in the optical fibre communications of the future","authors":"A. Hadjifotiou","doi":"10.1109/ICIPRM.1993.380723","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380723","url":null,"abstract":"Summary form only given. The author summarizes briefly the current network requirements and outlines the characteristics of the InP devices that are used. Secondly the future information requirements and possible broadband network configurations suitable for time or wavelength division multiplexing are introduced and their requirements and possible broadband network configurations suitable for time or wavelength division multiplexing are introduced and their requirements in terms of devices are analyzed. The focus is on InP devices that can satisfy the system requirements. Five critical areas where InP technology can be used with substantial advantages for future communications are reviewed. An outline of the RACE program is given that is addressing the basic technology and device design problems of the InP technology.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129710742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380666
M. Heimbuch, A. Holmes, M. Mack, S. Denbaars, L. Coldren, J. Bowers
The authors have achieved low threshold In/sub x/Ga/sub 1-x/As/InP quantum well laser diodes, grown in a non-hydride metalorganic chemical vapor deposition system at atmospheric pressure using tertiarybutylarsine and tertiarybutylphosphine. Broad area laser diodes, emitting at 1.3 /spl mu/m, with a 1500 /spl Aring/ GaInAsP active region achieved threshold current densities of 1.25 kA/cm/sup 2/ for 400 micron cavity length. Strained and unstrained quantum wells with luminescence at 1.55 /spl mu/m have been incorporated into the active regions of laser diodes. Lattice matched In/sub 0.53/Ga/sub 0.47/As/InP single quantum well lasers exhibited extremely low threshold current densities of 220 A/cm/sup 2/ for broad area devices 3.5 mm in cavity length. Compressively strained 4 quantum wells devices displayed excellent threshold current densities of 300 A/cm/sup 2/ for 3 mm cavity lengths.<>
{"title":"High quality long wavelength lasers grown by atmospheric pressure MOCVD with liquid group V sources","authors":"M. Heimbuch, A. Holmes, M. Mack, S. Denbaars, L. Coldren, J. Bowers","doi":"10.1109/ICIPRM.1993.380666","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380666","url":null,"abstract":"The authors have achieved low threshold In/sub x/Ga/sub 1-x/As/InP quantum well laser diodes, grown in a non-hydride metalorganic chemical vapor deposition system at atmospheric pressure using tertiarybutylarsine and tertiarybutylphosphine. Broad area laser diodes, emitting at 1.3 /spl mu/m, with a 1500 /spl Aring/ GaInAsP active region achieved threshold current densities of 1.25 kA/cm/sup 2/ for 400 micron cavity length. Strained and unstrained quantum wells with luminescence at 1.55 /spl mu/m have been incorporated into the active regions of laser diodes. Lattice matched In/sub 0.53/Ga/sub 0.47/As/InP single quantum well lasers exhibited extremely low threshold current densities of 220 A/cm/sup 2/ for broad area devices 3.5 mm in cavity length. Compressively strained 4 quantum wells devices displayed excellent threshold current densities of 300 A/cm/sup 2/ for 3 mm cavity lengths.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128530855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380698
K. Rakennus, J. Likonen, J. Nappi, K. Tappura, H. Asonen, M. Pessa
The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber.<>
{"title":"Impurity related interface effects in GSMBE grown InP","authors":"K. Rakennus, J. Likonen, J. Nappi, K. Tappura, H. Asonen, M. Pessa","doi":"10.1109/ICIPRM.1993.380698","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380698","url":null,"abstract":"The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128584092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380654
M. Blaser, R. Bauknecht, H. Melchior
The structure of InGaAs/InP junction field effect transistors with step-doped channel profiles for optoelectronic integrated circuit (OEIC) receiver applications is described. Transistors with a gate length of 3 microns have transconductances of 140 mS/mm, transit frequencies of 11.6 GHz and gate leakage currents around 1 /spl mu/A/mm. An excess noise factor of 1.5 was measured for transistors operated in optoelectronic integrated receivers.<>
描述了用于光电集成电路(OEIC)接收器的阶梯掺杂InGaAs/InP结场效应晶体管的结构。栅极长度为3微米的晶体管的跨导率为140 mS/mm，传输频率为11.6 GHz，栅极泄漏电流约为1 /spl mu/ a /mm。在光电集成接收机中工作的晶体管的过量噪声系数为1.5。
{"title":"High performance InGaAs/InP JFETs with step-doped channel doping for OEIC receivers","authors":"M. Blaser, R. Bauknecht, H. Melchior","doi":"10.1109/ICIPRM.1993.380654","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380654","url":null,"abstract":"The structure of InGaAs/InP junction field effect transistors with step-doped channel profiles for optoelectronic integrated circuit (OEIC) receiver applications is described. Transistors with a gate length of 3 microns have transconductances of 140 mS/mm, transit frequencies of 11.6 GHz and gate leakage currents around 1 /spl mu/A/mm. An excess noise factor of 1.5 was measured for transistors operated in optoelectronic integrated receivers.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129464107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380697
C. Tran, R. Masut, J. Brebner, M. Jouanne, R. Leonelli
The samples used for this study were InAs/InP strained single quantum wells and strained superlattices (SLS) grown by atomic layer epitaxy (ALE). The growth of InAs on InP is strongly influenced by the large lattice mismatch (3.22%). High resolution X-ray diffraction (HRXRD) was carried out. HRXRD can be used to quickly and precisely evaluate the ALE self-limiting growth rate of both InP and InAs. Using interference of X-ray wave fields in a ALE grown InP with an InAs marker layer the authors have accurately determined the growth per cycle. Raman spectra of AL grown InAs/InP SLSs show clearly the longitudinal acoustical folded modes and the longitudinal optic confined modes for both InAs and InP layers. The results indicate that despite the 3.2% lattice mismatch, ALE is a powerful method for fabricating highly strained InAs/InP structures with atomically controlled heterointerfaces.<>
{"title":"Atomic layer epitaxy of InP and InAs/InP heterostructures","authors":"C. Tran, R. Masut, J. Brebner, M. Jouanne, R. Leonelli","doi":"10.1109/ICIPRM.1993.380697","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380697","url":null,"abstract":"The samples used for this study were InAs/InP strained single quantum wells and strained superlattices (SLS) grown by atomic layer epitaxy (ALE). The growth of InAs on InP is strongly influenced by the large lattice mismatch (3.22%). High resolution X-ray diffraction (HRXRD) was carried out. HRXRD can be used to quickly and precisely evaluate the ALE self-limiting growth rate of both InP and InAs. Using interference of X-ray wave fields in a ALE grown InP with an InAs marker layer the authors have accurately determined the growth per cycle. Raman spectra of AL grown InAs/InP SLSs show clearly the longitudinal acoustical folded modes and the longitudinal optic confined modes for both InAs and InP layers. The results indicate that despite the 3.2% lattice mismatch, ALE is a powerful method for fabricating highly strained InAs/InP structures with atomically controlled heterointerfaces.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129914272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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