First fabrication of continuously graded InGaAsP on GaAs for 0.98/spl mu/m lasers

A. Iketani, M. Ohkubo, S. Namiki, T. Ijichi, T. Kikuta
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Abstract

InGaAs/GaAs/InGaAsP continuously graded index separate confinement heterostructure (GRIN-SCH) lasers were fabricated by metal organic chemical vapor deposition (MOCVD) for the first time. Transmission electron microscope observation and secondary ion mass spectroscopy measurement show that the continuously graded InGaAsP layers were grown excellently. A very high characteristic temperature of 307K was obtained on the ridge waveguide lasers. Very stable and narrow far field patterns were obtained. The coupling to a single mode fiber was performed with high coupling efficiency of 60%, and output power as high as 78mW was achieved.<>
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首次在GaAs上制备了0.98/spl mu/m的连续梯度InGaAsP激光器
首次采用金属有机化学气相沉积(MOCVD)技术制备了InGaAs/GaAs/InGaAsP连续渐变指数分离约束异质结构(GRIN-SCH)激光器。透射电镜观察和二次离子质谱测量表明,连续梯度的InGaAsP层生长良好。在脊波导激光器上获得了307K的高特性温度。得到了非常稳定的窄远场模式。与单模光纤的耦合效率高达60%,输出功率高达78mW。
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Normal incidence intersubband absorption in InGaAs quantum wells Interdiffusion of InGaAs/InGaAsP quantum wells GaInP/GaAs HBTs for microwave applications First fabrication of continuously graded InGaAsP on GaAs for 0.98/spl mu/m lasers Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p/sup -/-n/sup -/ collector structure
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