Z.G. Wang, C.H. Wang, Y.L. Liu, Y. Luo, S. Wan, G.H. Li, L.Y. Lin
{"title":"Evidence for the Antisite Defect B/sub As/ in Si and B Co-Implanted and B Implanted Undoped Si Lec-Gaas Crystal","authors":"Z.G. Wang, C.H. Wang, Y.L. Liu, Y. Luo, S. Wan, G.H. Li, L.Y. Lin","doi":"10.1109/SIM.1992.752676","DOIUrl":null,"url":null,"abstract":"Optical and electrical properties of undoped SI-LEC GaAs wafers implanted with B and co-implanted with B and Si have been investigated by photolurninescence (PL) spectrum and Van de Pauw measurements. All the experimental results indicated that boron can present as acceptor B/sub As/ and both the 1.436 and 1.317eV bands in PL spectra are related to antisite defect B/sub As/. The 1.317eV band is assumed to correspond to the (Si/sub Ga/ -B/sub As/) complex radiative recombination.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":" 11","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752676","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Optical and electrical properties of undoped SI-LEC GaAs wafers implanted with B and co-implanted with B and Si have been investigated by photolurninescence (PL) spectrum and Van de Pauw measurements. All the experimental results indicated that boron can present as acceptor B/sub As/ and both the 1.436 and 1.317eV bands in PL spectra are related to antisite defect B/sub As/. The 1.317eV band is assumed to correspond to the (Si/sub Ga/ -B/sub As/) complex radiative recombination.
利用光致发光(PL)光谱和Van de Pauw测量研究了掺杂B和共掺杂B - Si的未掺杂Si - lec GaAs晶片的光学和电学性质。所有实验结果表明，硼可以作为受体B/sub as /存在，PL光谱中的1.436和1.317eV波段都与对位缺陷B/sub as /有关。假设1.317eV波段对应于(Si/sub Ga/ -B/sub As/)复辐射复合。
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