{"title":"Analysis of the steady and transient characteristics of the leakage current in GaAs integrated circuits","authors":"J. Gual, J. Samitier, J. Morante","doi":"10.1109/SIM.1992.752718","DOIUrl":null,"url":null,"abstract":"We report a general model that allow us to analyze and simulate the steady and transient behavior of the leakage current between near devices in III-V integrated circuits. The model assumes the existence of a non-linear generation recombination process, impact ionization of deep traps, causing a non-equilibrium phase transition between a high resistive state and a conductive one.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report a general model that allow us to analyze and simulate the steady and transient behavior of the leakage current between near devices in III-V integrated circuits. The model assumes the existence of a non-linear generation recombination process, impact ionization of deep traps, causing a non-equilibrium phase transition between a high resistive state and a conductive one.
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