The relation between the structural quality of low-temperature (LT) GaAs layers and minority carrier lifetime was determined. RHEED, transmission electron microscopy (TEM), time resolved reflectance methods, and photoconductive switch response measurements were used for this study. Subpicosecond minority carrier lifetimes were found already in as-grown layers, and this value did not change after annealing of the layers and formation of As precipitates. It was found that the responsivity of these layers depends strongly on the structural quality of the layers.
{"title":"Relation between structure and lifetime of minority carriers -in MBE GaAs grown at low temperatures","authors":"Z. Liliental-Weber, S. Gupta, F. Smith","doi":"10.1109/SIM.1992.752689","DOIUrl":"https://doi.org/10.1109/SIM.1992.752689","url":null,"abstract":"The relation between the structural quality of low-temperature (LT) GaAs layers and minority carrier lifetime was determined. RHEED, transmission electron microscopy (TEM), time resolved reflectance methods, and photoconductive switch response measurements were used for this study. Subpicosecond minority carrier lifetimes were found already in as-grown layers, and this value did not change after annealing of the layers and formation of As precipitates. It was found that the responsivity of these layers depends strongly on the structural quality of the layers.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"36 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127445867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Asymmetric crystal x-ray topography (ACT) which can image entire 3" wafers on radiography film using a Cu x-ray source in less than 30 min. is a fast, convenient tool for routine wafer prescreening. An ACT study of over 70 SI LEC GaAs wafers revealed typical defects: low angle grain boundaries, dislocation cell structure, inclusions, precipitates, and included mosaic structure. A comparison of wafers from ten different vendors showed that the concentration of defects can vary significantly. Two correlations were found between crystal quality and wafer manufacturability. First, wafers from boules which had a high density of clustered low angle grain boundaries were found to be too mechanically fragile to survive all the processing steps required in device fabrication. Second, wafers from boules which showed the presence of large included mosaic crystals all showed poor or erratic cleaving characteristics causing the loss of many devices.
{"title":"X-ray topography used as a routine tool in the evaluation of the crystal quality of GaAs substrate wafers","authors":"I.C. Bassignana, D.A. Macquistan","doi":"10.1109/SIM.1992.752697","DOIUrl":"https://doi.org/10.1109/SIM.1992.752697","url":null,"abstract":"Asymmetric crystal x-ray topography (ACT) which can image entire 3\" wafers on radiography film using a Cu x-ray source in less than 30 min. is a fast, convenient tool for routine wafer prescreening. An ACT study of over 70 SI LEC GaAs wafers revealed typical defects: low angle grain boundaries, dislocation cell structure, inclusions, precipitates, and included mosaic structure. A comparison of wafers from ten different vendors showed that the concentration of defects can vary significantly. Two correlations were found between crystal quality and wafer manufacturability. First, wafers from boules which had a high density of clustered low angle grain boundaries were found to be too mechanically fragile to survive all the processing steps required in device fabrication. Second, wafers from boules which showed the presence of large included mosaic crystals all showed poor or erratic cleaving characteristics causing the loss of many devices.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125016987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The compensation of electrical conductivity of a wide range of n-type and p-type GaAs diffused with the group-I element Li has been investigated. For diffusion temperatures exceeding 700-800 /spl deg/C a full compensation of all conducting samples is obtained in undoped, n-type and p-type samples. The fully compensated samples show resistivity higher than 10/sup 7/ /spl omega/ cm. The photoluminescence of these samples is characterized by excitation dependent emissions which shift to lower energies with increasing degree of compensation. Electrical and optical properties of the Li-compensated samples are discussed in terms of buried Schottky barriers and fluctuations of the electrostatic potential in impure, compensated crystals.
{"title":"Properties of high-resistivity Li-diffused GaAs","authors":"H. Gíslason, B. H. Yang, M. Linnarsson","doi":"10.1109/SIM.1992.752677","DOIUrl":"https://doi.org/10.1109/SIM.1992.752677","url":null,"abstract":"The compensation of electrical conductivity of a wide range of n-type and p-type GaAs diffused with the group-I element Li has been investigated. For diffusion temperatures exceeding 700-800 /spl deg/C a full compensation of all conducting samples is obtained in undoped, n-type and p-type samples. The fully compensated samples show resistivity higher than 10/sup 7/ /spl omega/ cm. The photoluminescence of these samples is characterized by excitation dependent emissions which shift to lower energies with increasing degree of compensation. Electrical and optical properties of the Li-compensated samples are discussed in terms of buried Schottky barriers and fluctuations of the electrostatic potential in impure, compensated crystals.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122992819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z.G. Wang, C.H. Wang, Y.L. Liu, Y. Luo, S. Wan, G.H. Li, L.Y. Lin
Optical and electrical properties of undoped SI-LEC GaAs wafers implanted with B and co-implanted with B and Si have been investigated by photolurninescence (PL) spectrum and Van de Pauw measurements. All the experimental results indicated that boron can present as acceptor B/sub As/ and both the 1.436 and 1.317eV bands in PL spectra are related to antisite defect B/sub As/. The 1.317eV band is assumed to correspond to the (Si/sub Ga/ -B/sub As/) complex radiative recombination.
利用光致发光(PL)光谱和Van de Pauw测量研究了掺杂B和共掺杂B - Si的未掺杂Si - lec GaAs晶片的光学和电学性质。所有实验结果表明，硼可以作为受体B/sub as /存在，PL光谱中的1.436和1.317eV波段都与对位缺陷B/sub as /有关。假设1.317eV波段对应于(Si/sub Ga/ -B/sub As/)复辐射复合。
{"title":"Evidence for the Antisite Defect B/sub As/ in Si and B Co-Implanted and B Implanted Undoped Si Lec-Gaas Crystal","authors":"Z.G. Wang, C.H. Wang, Y.L. Liu, Y. Luo, S. Wan, G.H. Li, L.Y. Lin","doi":"10.1109/SIM.1992.752676","DOIUrl":"https://doi.org/10.1109/SIM.1992.752676","url":null,"abstract":"Optical and electrical properties of undoped SI-LEC GaAs wafers implanted with B and co-implanted with B and Si have been investigated by photolurninescence (PL) spectrum and Van de Pauw measurements. All the experimental results indicated that boron can present as acceptor B/sub As/ and both the 1.436 and 1.317eV bands in PL spectra are related to antisite defect B/sub As/. The 1.317eV band is assumed to correspond to the (Si/sub Ga/ -B/sub As/) complex radiative recombination.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":" 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114053495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The properties of hetero-antisite impurities in III-V semiconductors are, reviewed. The present understanding of the best known case, the Sb/sub Ga/ double-donor hetero-antisite defect in GaAs, is presented in detail, and the formation mechanisms, the spin resonance properties, the electronic structure, including our theoretical understanding of it, are described. Finally, a comparison with properties of the As/sub Ga/- related EL2 defect is made.
{"title":"Hetero-antisite defects in III-V materials","authors":"P. Omling","doi":"10.1109/SIM.1992.752672","DOIUrl":"https://doi.org/10.1109/SIM.1992.752672","url":null,"abstract":"The properties of hetero-antisite impurities in III-V semiconductors are, reviewed. The present understanding of the best known case, the Sb/sub Ga/ double-donor hetero-antisite defect in GaAs, is presented in detail, and the formation mechanisms, the spin resonance properties, the electronic structure, including our theoretical understanding of it, are described. Finally, a comparison with properties of the As/sub Ga/- related EL2 defect is made.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128134150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The photoquenching of the paramagnetic As/sup +//sub Ga/ -related antisites in semi insulating GaAs shows evidence for a metastability akin to that of EL2. To test a recent model of this phenomenon based on hindered charge transfers between donors and acceptors, neutron transmutation has been used to study the effect of additional dopants. The experiment shows the strong effect of residual acceptor related lattice damage, but in overall agrees with the charge transfer model in a comparison with the traditional configurational change model.
{"title":"Carrier control by neutron-transmutation doping of semi-insulating GaAs","authors":"T. Benchiguer, B. Marí, C. Schwab","doi":"10.1109/SIM.1992.752675","DOIUrl":"https://doi.org/10.1109/SIM.1992.752675","url":null,"abstract":"The photoquenching of the paramagnetic As/sup +//sub Ga/ -related antisites in semi insulating GaAs shows evidence for a metastability akin to that of EL2. To test a recent model of this phenomenon based on hindered charge transfers between donors and acceptors, neutron transmutation has been used to study the effect of additional dopants. The experiment shows the strong effect of residual acceptor related lattice damage, but in overall agrees with the charge transfer model in a comparison with the traditional configurational change model.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"1155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132711055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Kaminaka, H. Morishita, M. Kiyama, A. Kawasaki, M. Yokogawa, K. Fujita, S. Akai
We have investigated the variation of threshold voltage (Vth) with regard to the resistivity (p) of the semi-insulating substrate, and have found that there is a good correlation between p and Vth. It has previously been reported that the uniformity of Vth (/spl sigma/Vth) has a relation to the uniformity of microscopic resistivity (/spl sigma/p/p) of the semi-insulating substrate. We have studied a correlation between /spl sigma/p/p and the Hall mobility of the semi-insulating substrate (/spl mu//sub H/). It has been found that a substrate with a higher /spl mu//sub H/ can produce better /spl sigma/Vth. These results suggest that the Vth can be controlled by substrate parameters such as resistivity and mobility.
{"title":"Vth control in GaAs by substrate parameters","authors":"K. Kaminaka, H. Morishita, M. Kiyama, A. Kawasaki, M. Yokogawa, K. Fujita, S. Akai","doi":"10.1109/SIM.1992.752716","DOIUrl":"https://doi.org/10.1109/SIM.1992.752716","url":null,"abstract":"We have investigated the variation of threshold voltage (Vth) with regard to the resistivity (p) of the semi-insulating substrate, and have found that there is a good correlation between p and Vth. It has previously been reported that the uniformity of Vth (/spl sigma/Vth) has a relation to the uniformity of microscopic resistivity (/spl sigma/p/p) of the semi-insulating substrate. We have studied a correlation between /spl sigma/p/p and the Hall mobility of the semi-insulating substrate (/spl mu//sub H/). It has been found that a substrate with a higher /spl mu//sub H/ can produce better /spl sigma/Vth. These results suggest that the Vth can be controlled by substrate parameters such as resistivity and mobility.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133143220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Weyher, C. Frigeri, L. Zanotti, H. Alt, P. van der Wel, P. Gail
Undoped GaAs crystals were grown by LEC method from Ga-rich melts with the initial composition above the critical value for transition from S.I. to p-type material. The typical resistivity values measured on these crystals were: 5x10/sup 7/ ohm-cm (seed part) and 6x10/sup 5/ ohm.cm (main body). Samples with these different characteristics were subjected to detailed studies including DSL photoetching, TEM, SRPL, LST and IR absorption. Remarkable differences were found between the high and low resistivity parts of the ingots relating to structural and optical properties. A model is presented based on the concept of the temperature-time-transformation (TTT) diagram, which explains the solid-state phase transitions. Seemingly conflicting results about the increasing EL2 concentration along the ingot axis are explained in terms of competition between formation of EL2 and arsenic precipitates. The present results indicate that the position of the congruent melting point is on the As-rich side of the phase diagram.
{"title":"Structural and electrical characteristics of undoped LEC GaAs crystals grown from slightly Ga-rich melts: a new approach","authors":"J. Weyher, C. Frigeri, L. Zanotti, H. Alt, P. van der Wel, P. Gail","doi":"10.1109/SIM.1992.752683","DOIUrl":"https://doi.org/10.1109/SIM.1992.752683","url":null,"abstract":"Undoped GaAs crystals were grown by LEC method from Ga-rich melts with the initial composition above the critical value for transition from S.I. to p-type material. The typical resistivity values measured on these crystals were: 5x10/sup 7/ ohm-cm (seed part) and 6x10/sup 5/ ohm.cm (main body). Samples with these different characteristics were subjected to detailed studies including DSL photoetching, TEM, SRPL, LST and IR absorption. Remarkable differences were found between the high and low resistivity parts of the ingots relating to structural and optical properties. A model is presented based on the concept of the temperature-time-transformation (TTT) diagram, which explains the solid-state phase transitions. Seemingly conflicting results about the increasing EL2 concentration along the ingot axis are explained in terms of competition between formation of EL2 and arsenic precipitates. The present results indicate that the position of the congruent melting point is on the As-rich side of the phase diagram.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117027447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M.C. Heimlich, R.J. Gutmanna, L. Kerber, S. Moreau, J. Vaughan
Photo-Induced Microwave Reflectometry (PIMR) is used to study three different aspects of implanted channel technology. In the first experiment, implant channeling is introduced into wafers from two separate boules by varying the implant rotation angle. Sheet resistance, after furnace annealing, and bulk defect data determined by PIMR indicate boule-to-boule variations consistent with a stoichiometrically constrained activation model involving bulk EL2 and boron concentrations. The second experiment focuses on the effect of nitride capped RTA on a set of implanted and unimplanted adjacent wafers from a single boule. These PIMR data show the RTA temperature dependence of several phenomena, such as channel activation, bulk point defect reactions, and subchannel defect evolution. In the final experiment, a comparison between similar boron and silicon implants reveals that a measure of activation occurs prior to any high temperature processing.
{"title":"Characterization of active channel processing by PIMR","authors":"M.C. Heimlich, R.J. Gutmanna, L. Kerber, S. Moreau, J. Vaughan","doi":"10.1109/SIM.1992.752714","DOIUrl":"https://doi.org/10.1109/SIM.1992.752714","url":null,"abstract":"Photo-Induced Microwave Reflectometry (PIMR) is used to study three different aspects of implanted channel technology. In the first experiment, implant channeling is introduced into wafers from two separate boules by varying the implant rotation angle. Sheet resistance, after furnace annealing, and bulk defect data determined by PIMR indicate boule-to-boule variations consistent with a stoichiometrically constrained activation model involving bulk EL2 and boron concentrations. The second experiment focuses on the effect of nitride capped RTA on a set of implanted and unimplanted adjacent wafers from a single boule. These PIMR data show the RTA temperature dependence of several phenomena, such as channel activation, bulk point defect reactions, and subchannel defect evolution. In the final experiment, a comparison between similar boron and silicon implants reveals that a measure of activation occurs prior to any high temperature processing.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116410862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Dubecký, J. Darmo, J. Betkó, G. Papaioannou, V. Ioannou, M. Baurngartner
Deep states in undoped semi-insulating GaAs with low carbon content were investigated by PICTS and Photo-DLTS. Hall and Photo-Hall measurements proved that peaks observed in Photo-DLTS spectra are due to the electron emission from deep donor states. Other peaks obtained in PICTS spectra were attributed to the hole emission from acceptor states with the apparent energy levels E/sub pa/ /spl ap/ 0.18, 0.19, 0.21, 0.5 eV. A minimal value of their total concentration except of 0.5 eV level was estimated at about 1x10/sup 15/ cm/sup -3/. The peak of 0.5 eV level with dominant amplitude in detected spectra correlates with the hole emission from EL2/sup +/++/ double donor state. The 0.19 and 0.21 levels are most probably related to the double acceptor Ga/sub As/ antisite.defect.
{"title":"Study of deep acceptor states in undoped Semi-insulating GaAs with low carbon content by transient spectroscopy techniques","authors":"F. Dubecký, J. Darmo, J. Betkó, G. Papaioannou, V. Ioannou, M. Baurngartner","doi":"10.1109/SIM.1992.752707","DOIUrl":"https://doi.org/10.1109/SIM.1992.752707","url":null,"abstract":"Deep states in undoped semi-insulating GaAs with low carbon content were investigated by PICTS and Photo-DLTS. Hall and Photo-Hall measurements proved that peaks observed in Photo-DLTS spectra are due to the electron emission from deep donor states. Other peaks obtained in PICTS spectra were attributed to the hole emission from acceptor states with the apparent energy levels E/sub pa/ /spl ap/ 0.18, 0.19, 0.21, 0.5 eV. A minimal value of their total concentration except of 0.5 eV level was estimated at about 1x10/sup 15/ cm/sup -3/. The peak of 0.5 eV level with dominant amplitude in detected spectra correlates with the hole emission from EL2/sup +/++/ double donor state. The 0.19 and 0.21 levels are most probably related to the double acceptor Ga/sub As/ antisite.defect.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126657943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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