Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique
{"title":"Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique","authors":"W. S. Lau, C. H. Goo, T. C. Chong","doi":"10.1109/SIM.1992.752692","DOIUrl":null,"url":null,"abstract":"A new technique, zero quiescent bias voltage transient current spectroscopy (ZBTCS), was proposed and applied to annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy (MBE). With this new technique, the concentration of the dominant electron trap, which has an activation energy of 0.55 eV, in GaAs grown by MBE at 230/spl deg/C and subsequently annealed in arsenic vapour, was found to be about 4 x 10/sup 16/ CM/sup -3/. This trap is believed to be the EL3 electron trap related to oxygen contamination.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new technique, zero quiescent bias voltage transient current spectroscopy (ZBTCS), was proposed and applied to annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy (MBE). With this new technique, the concentration of the dominant electron trap, which has an activation energy of 0.55 eV, in GaAs grown by MBE at 230/spl deg/C and subsequently annealed in arsenic vapour, was found to be about 4 x 10/sup 16/ CM/sup -3/. This trap is believed to be the EL3 electron trap related to oxygen contamination.
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