C. Doyen, V. Yon, X. Garros, L. Basset, Tadeu Mota Frutuoso, C. Dagon, C. Diouf, X. Federspiel, V. Millon, F. Monsieur, C. Pribat, D. Roy
{"title":"Insight Into HCI Reliability on I/O Nitrided Devices","authors":"C. Doyen, V. Yon, X. Garros, L. Basset, Tadeu Mota Frutuoso, C. Dagon, C. Diouf, X. Federspiel, V. Millon, F. Monsieur, C. Pribat, D. Roy","doi":"10.1109/IRPS48203.2023.10117681","DOIUrl":null,"url":null,"abstract":"Hot carriers injection (HCI) degradation plays an important role in advanced technologies. We carried out an extensive analysis of this degradation mode on 55nm MOS transistors and showed that for large channel lengths, a stress at $V_{G}=V_{D}$ becomes more critical than at $V_{G}= V_{Gibmax}$ condition. This is imputable to an additional degradation mechanism distributed throughout the channel, which likely appears on nitrided samples.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10117681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Hot carriers injection (HCI) degradation plays an important role in advanced technologies. We carried out an extensive analysis of this degradation mode on 55nm MOS transistors and showed that for large channel lengths, a stress at $V_{G}=V_{D}$ becomes more critical than at $V_{G}= V_{Gibmax}$ condition. This is imputable to an additional degradation mechanism distributed throughout the channel, which likely appears on nitrided samples.