{"title":"Signal duration sensitive degradation in scaled devices","authors":"G. Bersuker, E. Tang, D. Veksler","doi":"10.1109/IRPS48203.2023.10118314","DOIUrl":null,"url":null,"abstract":"Defect generation controlling device degradation is found to be highly sensitive to the signal duration in circuitry-relevant operation frequencies (GHz). Stressing devices in ns-time range reveals greatly extended device lifetimes compared to conventional evaluation conditions. The role of energy generation/dissipation in scaled devices is discussed.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"13 1-4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10118314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Defect generation controlling device degradation is found to be highly sensitive to the signal duration in circuitry-relevant operation frequencies (GHz). Stressing devices in ns-time range reveals greatly extended device lifetimes compared to conventional evaluation conditions. The role of energy generation/dissipation in scaled devices is discussed.
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