GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: From the Time-Zero to the Aging States

Abstract

Through tremendous experimental data, this study focuses on the cycle-to-cycle variation (CCV) in ultra-scaled FinFETs at the GHz circuit speed, which is an urgent demand for the reliability community but has seldom been reported so far. The random occupancy of traps and interface states behind CCV was investigated with the different switching speeds and full $\{V_{G}, V_{D}\}$ bias space. Moreover, we observed the CCV degradation during hot carrier degradation (HCD) and further explored its mechanism based on statistical datasets. This CCV study during HCD is helpful for the reliability variability-aware device/circuit co-design in advanced technology nodes.