T. Dalton, N. Fuller, C. Tweedie, D. Dunn, C. Labelle, S. Gates, M. Colburn, S.T. Chen, T. Lai, R. Dellaguardia, K. Petrarca, C. Dziobkowski, K. Kumar, S. Siddiqui
{"title":"Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing","authors":"T. Dalton, N. Fuller, C. Tweedie, D. Dunn, C. Labelle, S. Gates, M. Colburn, S.T. Chen, T. Lai, R. Dellaguardia, K. Petrarca, C. Dziobkowski, K. Kumar, S. Siddiqui","doi":"10.1109/IITC.2004.1345724","DOIUrl":null,"url":null,"abstract":"Modification of low-k dielectric materials during photoresist plasma stripping was examined using a variety of analytical techniques. These techniques were initially applied to blanket wafers and were subsequently applied to both specially-designed test structures and product structures on patterned wafers. Results of these experiments are presented and analyzed.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345724","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Modification of low-k dielectric materials during photoresist plasma stripping was examined using a variety of analytical techniques. These techniques were initially applied to blanket wafers and were subsequently applied to both specially-designed test structures and product structures on patterned wafers. Results of these experiments are presented and analyzed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
