K. Rim, J. Chu, H. Chen, K. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P. Mooney, D. Lacey, S. Koester, K. Chan, D. Boyd, M. Ieong, H.-S.P. Wong
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引用次数: 151
Abstract
Current drive enhancements were demonstrated in the strained-Si PMOSFETs with sub-100 nm physical gate lengths for the first time, as well as in the NMOSFETs with well-controlled threshold voltage V/sub T/ and overlap capacitance C/sub OV/ characteristics for L/sub poly/ and L/sub eff/ below 80 nm and 60 nm. A 110% enhancement in the electron mobility was observed in the strained Si devices with 1.2% tensile strain (28% Ge content in the relaxed SiGe buffer), along with a 45% increase in the peak hole mobility.
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