H. Momose, T. Ohguro, K. Kojima, S. Nakamura, Y. Toyoshima
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引用次数: 20
Abstract
The DC and RF analog characteristics of ultra-thin gate oxide CMOS on [110] surface-oriented Si substrate were investigated for the first time. Gm of p-MOSFET on [110] substrate is 1.9 times greater than that on [100] substrate, even in gate oxides in a direct-tunneling regime. An extremely high cut-off frequency of 110 GHz was obtained in 0.11 /spl mu/m gate length p-MOSFET with 1.5 nm gate oxide.
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