Nuo Xu, Jing Wang, Yang Lu, Hong-hyun Park, Bo Fu, Renyu Chen, W. Choi, D. Apalkov, Sungchul Lee, S. Ahn, Yohan Kim, Yutaka Nishizawa, Keun-Ho Lee, Youngkwan Park, E. Jung
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引用次数: 11
Abstract
A comprehensive compact modeling framework coupling quantum transport with magnetic dynamics has been developed for state-of-the-art and emerging STT-MRAMs. After validation with numerical simulation and experimental results, various transistor-MRAM cell architectures have been studied for their performance and variability. SOT-assisted MRAMs are found to have significant improvement on Erase time over conventional STT-MRAMs.
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