Very fast transient simulation and measurement methodology for ESD technology development

S. Malobabic, D. Ellis, J. Liou, J. Salcedo, J. Hajjar, Y. Zhou
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引用次数: 5

Abstract

A Transient safe operating area (TSOA) definition for ESD applications is introduced. Within this concept framework, ESD protection device topologies developed in a mixed-signal submicron high-voltage CMOS technology are studied to identify turn-on voltage and the resulting voltage overshoot conditions during fast ESD transients. A state-of-the-art numerical simulation environment used to study and optimize the fast transient response of ESD protection devices is discussed and simulation results are benchmarked versus very fast transmission line pulsing measurements. Constraints for triggering control of clamp devices are also investigated via simulations and pulse measurements.
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非常快速的瞬态仿真和测量方法为ESD技术的发展
介绍了ESD应用的暂态安全操作区域(TSOA)定义。在这个概念框架内,研究了采用混合信号亚微米高压CMOS技术开发的ESD保护器件拓扑结构,以识别快速ESD瞬变过程中的导通电压和由此产生的电压超调条件。讨论了用于研究和优化ESD保护器件快速瞬态响应的最先进的数值模拟环境,并将模拟结果与非常快的传输线脉冲测量进行了基准测试。通过仿真和脉冲测量研究了箝位装置触发控制的约束条件。
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