M. Kittler, M. Reiche, X. Yu, T. Arguirov, O. Vyvenko, W. Seifert, T. Mchedlidze, G. Jia, T. Wilhelm
{"title":"1.5 μm Emission from a Silicon MOS-LED Based on a Dislocation Network","authors":"M. Kittler, M. Reiche, X. Yu, T. Arguirov, O. Vyvenko, W. Seifert, T. Mchedlidze, G. Jia, T. Wilhelm","doi":"10.1109/IEDM.2006.346912","DOIUrl":null,"url":null,"abstract":"A novel Si MOS-LED is demonstrated, which is fully compatible with Si technology. It is based on a dislocation network fabricated by wafer direct bonding. Light emission at 1.5 μm was observed when the network was near the Si/SiO2 interface close to/inside the accumulation layer induced by the gate voltage","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346912","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A novel Si MOS-LED is demonstrated, which is fully compatible with Si technology. It is based on a dislocation network fabricated by wafer direct bonding. Light emission at 1.5 μm was observed when the network was near the Si/SiO2 interface close to/inside the accumulation layer induced by the gate voltage
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