T. Sugizaki, M. Nakamura, M. Yanagita, M. Honda, M. Shinohara, T. Ikuta, T. Ohchi, K. Kugimiya, R. Yamamoto, S. Kanda, I. Yamamura, K. Yagami, T. Oda
{"title":"Ultra High-speed Novel Bulk Thyristor-SRAM (BT-RAM) Cell with Selective Epitaxy Anode (SEA)","authors":"T. Sugizaki, M. Nakamura, M. Yanagita, M. Honda, M. Shinohara, T. Ikuta, T. Ohchi, K. Kugimiya, R. Yamamoto, S. Kanda, I. Yamamura, K. Yagami, T. Oda","doi":"10.1109/IEDM.2006.346984","DOIUrl":null,"url":null,"abstract":"We developed novel SRAM cells using bulk thyristor-RAM (BT-RAM). BT-RAM, formed on bulk Si wafers, is low cost and has good compatibility with logic process flows. BT-RAM has excellent performance, with a 100-ps read/write, high Ion/Ioff current ratio (> 108), and low standby current (< 0.5 nA/cell). We can expect the ideal cell size to be as low as 30 F2, one-fourth that of a conventional 6T-SRAM cell, by using selective epitaxy technique for anode regions (SEA). BT-RAM provides us with solutions to many inherent problems in 6T-SRAM in the 65-nm generation and beyond","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We developed novel SRAM cells using bulk thyristor-RAM (BT-RAM). BT-RAM, formed on bulk Si wafers, is low cost and has good compatibility with logic process flows. BT-RAM has excellent performance, with a 100-ps read/write, high Ion/Ioff current ratio (> 108), and low standby current (< 0.5 nA/cell). We can expect the ideal cell size to be as low as 30 F2, one-fourth that of a conventional 6T-SRAM cell, by using selective epitaxy technique for anode regions (SEA). BT-RAM provides us with solutions to many inherent problems in 6T-SRAM in the 65-nm generation and beyond
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