K. Kohiro, K. Kainosho, R. Hirano, M. Uchida, S. Katsura, H. Kurita, T. Fukui, O. Oda
{"title":"Bulk InP technologies: InP against GaAs","authors":"K. Kohiro, K. Kainosho, R. Hirano, M. Uchida, S. Katsura, H. Kurita, T. Fukui, O. Oda","doi":"10.1109/ICIPRM.1994.328244","DOIUrl":null,"url":null,"abstract":"Recently, the quality of InP bulk crystals has been greatly improved. In this paper, recent developments of InP crystal technologies are reviewed, including growth of large crystals, reduction of dislocation densities, preparation of undoped semi-insulating (SI) materials and polishing qualities. We also discuss the status of InP against GaAs from the viewpoints of substrate qualities and the production capability.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328244","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Recently, the quality of InP bulk crystals has been greatly improved. In this paper, recent developments of InP crystal technologies are reviewed, including growth of large crystals, reduction of dislocation densities, preparation of undoped semi-insulating (SI) materials and polishing qualities. We also discuss the status of InP against GaAs from the viewpoints of substrate qualities and the production capability.<>
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