{"title":"Improvement of InAlAs/InP heterointerface grown by MOVPE by using thin AlP layer","authors":"K. Imanishi, K. Kasai","doi":"10.1109/ICIPRM.1994.328297","DOIUrl":null,"url":null,"abstract":"InAlAs/InP selectively doped heterostructures have great potential for microwave and millimeter-wave power device applications. InAlAs/InP HEMTs have a higher breakdown voltage and lower output conductance than InAlAs/InGaAs HEMTs. Few studies have been reported on InAlAs/InP selectively doped heterostructures, however, because it is difficult to grow high-quality interfaces between the InAlAs and InP layers. Brasil et al. (1991, 1992) reported the interface characteristics of gas-source MBE-grown InAlAs/InP heterostructures using photoluminescence (PL) measurement. In this paper, we investigate the interface characteristics of InAlAs/InP heterostructures grown by reduced-pressure metal organic vapor phase epitaxy (MOVPE). We improved the 2DEG characteristics of InAlAs/InP heterostructures by inserting an AlP interfacial layer between InAlAs and InP.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
InAlAs/InP selectively doped heterostructures have great potential for microwave and millimeter-wave power device applications. InAlAs/InP HEMTs have a higher breakdown voltage and lower output conductance than InAlAs/InGaAs HEMTs. Few studies have been reported on InAlAs/InP selectively doped heterostructures, however, because it is difficult to grow high-quality interfaces between the InAlAs and InP layers. Brasil et al. (1991, 1992) reported the interface characteristics of gas-source MBE-grown InAlAs/InP heterostructures using photoluminescence (PL) measurement. In this paper, we investigate the interface characteristics of InAlAs/InP heterostructures grown by reduced-pressure metal organic vapor phase epitaxy (MOVPE). We improved the 2DEG characteristics of InAlAs/InP heterostructures by inserting an AlP interfacial layer between InAlAs and InP.<>
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