Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328234
D. Babic, J. J. Dudley, K. Streubel, R. Mirin, E. Hu, J. Bowers
We demonstrate for the first time the operation of all-epitaxial vertical cavity lasers operating at 1.52 /spl mu/m using optical pumping. The laser cavity is formed by bonding an MOCVD-grown InGaAsP/InP mirror to an MBE-grown AlAs/GaAs mirror using the wafer fusion technique. The active region is a bulk 1.55 /spl mu/m InGaAsP layer of thickness 2/spl lambda/. Multiple transverse mode laser operation with equidistant mode separations of 1 nm was observed. The laser structure operated at heat sink temperatures as high as 35/spl deg/C.<>
{"title":"Optically-pumped all-epitaxial wafer-fused 1.52-/spl mu/m vertical-cavity lasers","authors":"D. Babic, J. J. Dudley, K. Streubel, R. Mirin, E. Hu, J. Bowers","doi":"10.1109/ICIPRM.1994.328234","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328234","url":null,"abstract":"We demonstrate for the first time the operation of all-epitaxial vertical cavity lasers operating at 1.52 /spl mu/m using optical pumping. The laser cavity is formed by bonding an MOCVD-grown InGaAsP/InP mirror to an MBE-grown AlAs/GaAs mirror using the wafer fusion technique. The active region is a bulk 1.55 /spl mu/m InGaAsP layer of thickness 2/spl lambda/. Multiple transverse mode laser operation with equidistant mode separations of 1 nm was observed. The laser structure operated at heat sink temperatures as high as 35/spl deg/C.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115307189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328320
R. Kaiser, F. Fidorra, H. Heidrich, P. Albrecht, W. Rehbein, S. Malchow, H. Schroeter-Janssen, D. Franke, G. Sztefka
For the first time we present the integration of a tunable buried four-section DBR-laser butt coupled to a directional coupler based on semi-insulating strip loaded (InGaAsP/InP):Fe waveguides by using selective area epitaxy with large mask areas. Good planarity after the epitaxial regrowth of the waveguide layers has been achieved applying a special preparation of the laser mesa. Average coupling efficiencies of 52% and best values of 63% have been realized. The optical power of the guided light at each output port of the coupler exceeds 1 mW.<>
{"title":"Integration of tunable DBR-lasers with waveguides for heterodyne receiver OEIC applications using selective area MOVPE","authors":"R. Kaiser, F. Fidorra, H. Heidrich, P. Albrecht, W. Rehbein, S. Malchow, H. Schroeter-Janssen, D. Franke, G. Sztefka","doi":"10.1109/ICIPRM.1994.328320","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328320","url":null,"abstract":"For the first time we present the integration of a tunable buried four-section DBR-laser butt coupled to a directional coupler based on semi-insulating strip loaded (InGaAsP/InP):Fe waveguides by using selective area epitaxy with large mask areas. Good planarity after the epitaxial regrowth of the waveguide layers has been achieved applying a special preparation of the laser mesa. Average coupling efficiencies of 52% and best values of 63% have been realized. The optical power of the guided light at each output port of the coupler exceeds 1 mW.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115741506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328241
E. Martín, K. Vaccaro, W. Waters, S. Spaziani, J. P. Lorenzo, G. Robinson
Despite the theoretical advantages of InGaAs/InAlAs/InP photoFETs for electro-optical system applications, fully optimized device structures and processing protocols have yet to be developed. We report here results from several device variations directed toward such optimization. This includes variation of HEMT channel thickness and current density, grading of the hole-blocking InGaAs/InAlAs heterojunction. A novel substrate removal process with backside illumination, and frontside and backside passivation is explored for optimized discrete components as well as integrated devices. Many of these advances are applicable to both MSM photodetectors and photoFETs; results from each are presented.<>
{"title":"Processing and design techniques for InGaAs/InAlAs/InP photoFETs and MSMs","authors":"E. Martín, K. Vaccaro, W. Waters, S. Spaziani, J. P. Lorenzo, G. Robinson","doi":"10.1109/ICIPRM.1994.328241","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328241","url":null,"abstract":"Despite the theoretical advantages of InGaAs/InAlAs/InP photoFETs for electro-optical system applications, fully optimized device structures and processing protocols have yet to be developed. We report here results from several device variations directed toward such optimization. This includes variation of HEMT channel thickness and current density, grading of the hole-blocking InGaAs/InAlAs heterojunction. A novel substrate removal process with backside illumination, and frontside and backside passivation is explored for optimized discrete components as well as integrated devices. Many of these advances are applicable to both MSM photodetectors and photoFETs; results from each are presented.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115769141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328189
J. Schramm, M. Mondry, E. Hu, J. Merz
A simple, novel technique was devised to examine the effects of RIE self-bias voltage, plasma exposure time, and oxygen plasma clean conditions on the AlInAs Schottky contact layer of an InP-based HEMT.<>
{"title":"Conductance transient characterization of reactive ion etched HEMT gate recesses","authors":"J. Schramm, M. Mondry, E. Hu, J. Merz","doi":"10.1109/ICIPRM.1994.328189","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328189","url":null,"abstract":"A simple, novel technique was devised to examine the effects of RIE self-bias voltage, plasma exposure time, and oxygen plasma clean conditions on the AlInAs Schottky contact layer of an InP-based HEMT.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"63 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117225636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328150
C. Bergamaschi, W. Patrick, W. Baechtold
The noise temperature dependence on the electric field in an AlInAs/GaInAs HEMT heterostructure has been measured. It was found that the dependence of the noise temperature on the electric field in GaAs MESFETs and in AlInAs/GaInAs HEMTs are remarkably different. For this reason a different model must be used for AlInAs/GaInAs HEMTs. Based on the measured noise temperature dependence on the electric field, am analytic noise model for the AlInAs/GaInAs HEMT has been developed. The noise source parameters were calculated and compared with extracted noise source parameters from noise measurements.<>
{"title":"Determination of the noise source parameters in AlInAs/GaInAs HEMT heterostructures based on measured noise temperature dependence on the electric field","authors":"C. Bergamaschi, W. Patrick, W. Baechtold","doi":"10.1109/ICIPRM.1994.328150","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328150","url":null,"abstract":"The noise temperature dependence on the electric field in an AlInAs/GaInAs HEMT heterostructure has been measured. It was found that the dependence of the noise temperature on the electric field in GaAs MESFETs and in AlInAs/GaInAs HEMTs are remarkably different. For this reason a different model must be used for AlInAs/GaInAs HEMTs. Based on the measured noise temperature dependence on the electric field, am analytic noise model for the AlInAs/GaInAs HEMT has been developed. The noise source parameters were calculated and compared with extracted noise source parameters from noise measurements.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123241803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328307
S. Lourdudoss, K. Streubel, J. Wallin, J. André, O. Kjebon, G. Landgren
Selective growth of InP and related materials on patterned planar and non-planar substrates is one of the key steps in the fabrication of discrete and integrated optoelectronic devices. Growth of current blocking InP layers around the edge emitting laser (EEL) mesas are successfully used in many laboratories. In recent years, not only quantum wells have replaced the bulk active layers in the laser structures, but also, more and more advanced optoelectronic component structures continue to emerge; besides, ever since the successful demonstration of electrically pumped long wavelength vertical cavity surface emitting lasers (VCSEL) at low temperatures, there is an increasing urge to demonstrate it at room temperature. Both these situations set special demands on the selective regrowth of semi-insulating InP:Fe around mesas for current confinement, namely, a) the regrowth has to be rapid enough to avoid excessive quantum well mixing and unwanted dopant diffusion and b) it has to be successful even if the mesas are /spl sim/10 /spl mu/m high as in the case of VCSEL mesas. The purpose of this paper is to address these two points. Hydride Vapour Phase Epitaxy (HVPE) is best suited for the purpose owing to its selectivity, planarity and high growth rate. After successful regrowth of current blocking InP by HVPE for fabricating three types of edge emitting lasers (EEL) such as Fabry-Perot(FP), Distributed Feed Back (DFB) and Distributed Bragg Reflector (DBR) lasers, we have extended our studies to the regrowth of InP around cylindrical and cuboidal mesas of height up to 14 /spl mu/m with the intention of fabricating electrically pumped VCSEL. To the knowledge of the authors, such studies have not been reported. Here we present a comparison of the regrowth aspects in EEL and VCSEL cases. We also present a summary of certain device results of EEL fabricated by incorporating this technique.<>
{"title":"Very rapid and selective epitaxy of InP around mesas of height up to 14 /spl mu/m by hydride vapour phase epitaxy","authors":"S. Lourdudoss, K. Streubel, J. Wallin, J. André, O. Kjebon, G. Landgren","doi":"10.1109/ICIPRM.1994.328307","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328307","url":null,"abstract":"Selective growth of InP and related materials on patterned planar and non-planar substrates is one of the key steps in the fabrication of discrete and integrated optoelectronic devices. Growth of current blocking InP layers around the edge emitting laser (EEL) mesas are successfully used in many laboratories. In recent years, not only quantum wells have replaced the bulk active layers in the laser structures, but also, more and more advanced optoelectronic component structures continue to emerge; besides, ever since the successful demonstration of electrically pumped long wavelength vertical cavity surface emitting lasers (VCSEL) at low temperatures, there is an increasing urge to demonstrate it at room temperature. Both these situations set special demands on the selective regrowth of semi-insulating InP:Fe around mesas for current confinement, namely, a) the regrowth has to be rapid enough to avoid excessive quantum well mixing and unwanted dopant diffusion and b) it has to be successful even if the mesas are /spl sim/10 /spl mu/m high as in the case of VCSEL mesas. The purpose of this paper is to address these two points. Hydride Vapour Phase Epitaxy (HVPE) is best suited for the purpose owing to its selectivity, planarity and high growth rate. After successful regrowth of current blocking InP by HVPE for fabricating three types of edge emitting lasers (EEL) such as Fabry-Perot(FP), Distributed Feed Back (DFB) and Distributed Bragg Reflector (DBR) lasers, we have extended our studies to the regrowth of InP around cylindrical and cuboidal mesas of height up to 14 /spl mu/m with the intention of fabricating electrically pumped VCSEL. To the knowledge of the authors, such studies have not been reported. Here we present a comparison of the regrowth aspects in EEL and VCSEL cases. We also present a summary of certain device results of EEL fabricated by incorporating this technique.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123447559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328212
S. Chandrasekhar, L. Lunardi, R. Hamm, G. Qua
We report a monolithic chip incorporating an eight channel p-i-n/HBT photoreceiver array designed for multi-channel WDM applications. The p-i-n photodetectors are edge illuminated and centered at the right distance for mating with either ribbon fiber connectors or waveguide demultiplexers. Each channel operates at 2.5 Gb/s with an electrical cross talk of -20 dB between adjacent channels. The average sensitivity of each receiver in the array was measured to be (-20/spl plusmn/1) dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.5 /spl mu/m.<>
{"title":"Eight-channel p-i-n/HBT monolithic receiver array at 2.5 Gb/s per channel for WDM applications","authors":"S. Chandrasekhar, L. Lunardi, R. Hamm, G. Qua","doi":"10.1109/ICIPRM.1994.328212","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328212","url":null,"abstract":"We report a monolithic chip incorporating an eight channel p-i-n/HBT photoreceiver array designed for multi-channel WDM applications. The p-i-n photodetectors are edge illuminated and centered at the right distance for mating with either ribbon fiber connectors or waveguide demultiplexers. Each channel operates at 2.5 Gb/s with an electrical cross talk of -20 dB between adjacent channels. The average sensitivity of each receiver in the array was measured to be (-20/spl plusmn/1) dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.5 /spl mu/m.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115183969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328273
M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, S. Bailey, I. Weinberg, M. Goradia, D. Jayne, J. Moulot, N. Fatemi
Commonly used first layer antireflection (AR) coatings for InP solar cells, such as ZnS, Sb/sub 2/O/sub 3/, SiO/sub 2/ and SiO, deposited either by electron-beam or by resistive evaporation, destroy the stoichiometry of the emitter surface. Consequently, the surface recombination velocity (SRV) at the emitter surface is significantly increased, leading to a reduction in the values of solar cell performance parameters. This can be prevented by growing, after contacting, a thin native oxide layer on the emitter surface. Best results are obtained using a phosphorus-rich chemical oxide grown by chemical oxidation using a newly developed etchant (PNP) based on HNO/sub 3/, o-H/sub 3/PO/sub 4/ and H/sub 2/O/sub 2/. The chemical oxide grown on p/sup +/-InP emitters, using the PNP etchant, passivates the surface and can be used as a first layer AR coating.<>
{"title":"Effective first layer antireflective coating on InP solar cells grown by chemical oxidation","authors":"M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, S. Bailey, I. Weinberg, M. Goradia, D. Jayne, J. Moulot, N. Fatemi","doi":"10.1109/ICIPRM.1994.328273","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328273","url":null,"abstract":"Commonly used first layer antireflection (AR) coatings for InP solar cells, such as ZnS, Sb/sub 2/O/sub 3/, SiO/sub 2/ and SiO, deposited either by electron-beam or by resistive evaporation, destroy the stoichiometry of the emitter surface. Consequently, the surface recombination velocity (SRV) at the emitter surface is significantly increased, leading to a reduction in the values of solar cell performance parameters. This can be prevented by growing, after contacting, a thin native oxide layer on the emitter surface. Best results are obtained using a phosphorus-rich chemical oxide grown by chemical oxidation using a newly developed etchant (PNP) based on HNO/sub 3/, o-H/sub 3/PO/sub 4/ and H/sub 2/O/sub 2/. The chemical oxide grown on p/sup +/-InP emitters, using the PNP etchant, passivates the surface and can be used as a first layer AR coating.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129587826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328169
G. Bruno, M. Losurdo, G. Cicala, P. Capezzuto
In conventional MOCVD systems, high deposition temperatures are needed to supply the activation energy for both gas phase and surface reactions, and to produce epitaxial growth material with good morphology. Recently, there has been an increased interest on the use of the plasma, in remote configuration, to enhance the MOCVD process for the growth of III-V materials (1). The plasma, as a secondary source of energy, offers low temperature and low V/III ratio processing, mainly by the pre-cracking of the thermally relatively stable hydrides PHQ or AsH/sub 3/. Remote plasma processes are also receiving increased attention for other applications such as: (a) the substrate cleaning, for the removal of native oxides on InP and GaAs surface by hydrogen plasma treatment (2,3), and (b) the in situ generation of PHQ through the ablation of red-phosphorus in H/sub 2/ plasma (4,5). These RPE-MOCVD processes can operate in a wide range of parameters (pressure, r.f. power, gas flow, geometry, frequency, temperature) and the knowledge and understanding of the plasma chemistry controlling the production of reactive species are still far from being complete. In this work we present our first observations on a laboratory RPE-MOCVD reactor for the deposition of InP from PHQ and InMe/sub 3/. Mass spectrometry (MS) was used to investigate the in situ production of PH/sub 3/, the plasma pre-cracking of PH/sub 3/ and the InP growth process. The optical emission spectroscopy (OES) was also used for the analysis of the emitting species present in the plasma phase.<>
{"title":"In situ mass spectrometric diagnostics during InP deposition in a remote plasma-enhanced MOCVD system","authors":"G. Bruno, M. Losurdo, G. Cicala, P. Capezzuto","doi":"10.1109/ICIPRM.1994.328169","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328169","url":null,"abstract":"In conventional MOCVD systems, high deposition temperatures are needed to supply the activation energy for both gas phase and surface reactions, and to produce epitaxial growth material with good morphology. Recently, there has been an increased interest on the use of the plasma, in remote configuration, to enhance the MOCVD process for the growth of III-V materials (1). The plasma, as a secondary source of energy, offers low temperature and low V/III ratio processing, mainly by the pre-cracking of the thermally relatively stable hydrides PHQ or AsH/sub 3/. Remote plasma processes are also receiving increased attention for other applications such as: (a) the substrate cleaning, for the removal of native oxides on InP and GaAs surface by hydrogen plasma treatment (2,3), and (b) the in situ generation of PHQ through the ablation of red-phosphorus in H/sub 2/ plasma (4,5). These RPE-MOCVD processes can operate in a wide range of parameters (pressure, r.f. power, gas flow, geometry, frequency, temperature) and the knowledge and understanding of the plasma chemistry controlling the production of reactive species are still far from being complete. In this work we present our first observations on a laboratory RPE-MOCVD reactor for the deposition of InP from PHQ and InMe/sub 3/. Mass spectrometry (MS) was used to investigate the in situ production of PH/sub 3/, the plasma pre-cracking of PH/sub 3/ and the InP growth process. The optical emission spectroscopy (OES) was also used for the analysis of the emitting species present in the plasma phase.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129945416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328220
R. Walters
Theoretically, InP has one of the highest solar energy conversion efficiencies of any semiconductor material. However, InP wafers are brittle and expensive which makes large area, single crystal InP device fabrication difficult. Despite this difficulty, research in InP solar cells has progressed rapidly over the past 10 years. The reason is high radiation tolerance. This quality is an essential feature of space power sources due to the harsh space radiation environment, and InP solar cells are more radiation resistant than the leading solar cell technologies, i.e. Si and GaAs. Therefore, InP solar cells are a very attractive space power source and have been seriously developed as such. This paper first reviews the chronology of this development and then takes a focused look at the present understanding of the mechanism of the radiation response of InP solar cells.<>
{"title":"A review of radiation effects in InP solar cells","authors":"R. Walters","doi":"10.1109/ICIPRM.1994.328220","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328220","url":null,"abstract":"Theoretically, InP has one of the highest solar energy conversion efficiencies of any semiconductor material. However, InP wafers are brittle and expensive which makes large area, single crystal InP device fabrication difficult. Despite this difficulty, research in InP solar cells has progressed rapidly over the past 10 years. The reason is high radiation tolerance. This quality is an essential feature of space power sources due to the harsh space radiation environment, and InP solar cells are more radiation resistant than the leading solar cell technologies, i.e. Si and GaAs. Therefore, InP solar cells are a very attractive space power source and have been seriously developed as such. This paper first reviews the chronology of this development and then takes a focused look at the present understanding of the mechanism of the radiation response of InP solar cells.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130544650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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