Contamination control of particles smaller than 40 nm by thermophoretic force

A. Tamura, T. Yamashita, H. Matsui, K. Matsuzaki, T. Hayashi
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Abstract

As the miniaturization of semiconductor devices increases, the size of contamination particles that must be controlled becomes smaller. The effects of diffusion are stronger for smaller particles, so control becomes more difficult. We therefore evaluated the use of thermophoretic force in a new control technique. We confirmed that particle adhesion could be mostly prevented by simply heating the wafer to 5degC above the temperature of the air flow. Furthermore, we established a model of adhesion prevention behavior which predicts that the adhesion prevention effect of thermophoretic force is adequate, even for particles less than 40 nm in diameter. In addition, we actually confirmed that thermophoresis prevents adhesion even for 20 nm PSL particles.
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用热泳力控制小于40纳米颗粒的污染
随着半导体器件小型化程度的提高,必须控制的污染颗粒的尺寸也变得越来越小。对于较小的颗粒,扩散的影响更强,因此控制变得更加困难。因此,我们评估了热泳力在一种新的控制技术中的应用。我们证实,只要将晶圆片加热到比气流温度高5摄氏度,就可以防止颗粒粘附。此外,我们还建立了一个防止粘附行为的模型,该模型预测即使对于直径小于40 nm的颗粒,热泳力的防止粘附效果也是足够的。此外,我们实际上证实了热泳术即使对20nm的PSL颗粒也可以防止粘附。
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A statistical method for the characterization of bimodal electromigration distributions Contamination control of particles smaller than 40 nm by thermophoretic force Yield considerations in the choice of 3D technology Evolutionary business models and inter-firm engineering processes between the foundry and fabless in the semiconductor industry Systematic classification from the functional view in the check items for equipment quality assurance upon installation
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