{"title":"Improvement of Radiation Characteristics of a 300-GHz On-Chip Patch Antenna with Epoxy Mold Compound (EMC) Encapsulation","authors":"H. Bakshi, R. Murugan, Sylvester Ankamah-Kusi","doi":"10.1109/EPEPS53828.2022.9947128","DOIUrl":null,"url":null,"abstract":"Radiation characteristics of on-chip patch antennas are limited by the metallization and dielectric properties of the back-end of line (BEOL) silicon manufacturing processes. A 300-GHz on-chip patch antenna is designed using a radio frequency (RF) complementary metal-oxide-semiconductor (CMOS) process. The radiation efficiency, peak gain, and impedance bandwidth improve upon encapsulation of the antenna with IC packaging epoxy mold compounds (EMCs). In addition, high-frequency conduction and dielectric losses are analyzed, and their effects on antenna radiation efficiency are quantified in this paper. The overall radiation efficiency is shown to improve by 25%, peak gain by $\\sim 3 \\ \\boldsymbol{\\text{dB}}$, and the-10-dB return loss bandwidth improves from 3 GHz to 18 GHz by encapsulating a 300-GHz on-chip patch antenna within commercially available EMCs.","PeriodicalId":284818,"journal":{"name":"2022 IEEE 31st Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 31st Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPS53828.2022.9947128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Radiation characteristics of on-chip patch antennas are limited by the metallization and dielectric properties of the back-end of line (BEOL) silicon manufacturing processes. A 300-GHz on-chip patch antenna is designed using a radio frequency (RF) complementary metal-oxide-semiconductor (CMOS) process. The radiation efficiency, peak gain, and impedance bandwidth improve upon encapsulation of the antenna with IC packaging epoxy mold compounds (EMCs). In addition, high-frequency conduction and dielectric losses are analyzed, and their effects on antenna radiation efficiency are quantified in this paper. The overall radiation efficiency is shown to improve by 25%, peak gain by $\sim 3 \ \boldsymbol{\text{dB}}$, and the-10-dB return loss bandwidth improves from 3 GHz to 18 GHz by encapsulating a 300-GHz on-chip patch antenna within commercially available EMCs.
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