Investigation of Plasma Recovery during Fall Time in Plasma Source Ion Implantation

K. Chung, J. Choe, G. Kim, Y. Hwang
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Abstract

To investigate the plasma recovery during the fall time of a high voltage pulse, a numerical model is developed by applying fluid equations for ions while assuming thermal equilibrium for electrons. In the model, effects of the circuit impedance of pulse system are taken into account. The numerical analysis reveals that the plasma recovery is affected by both the properties of plasma and internal impedance of pulse system. The experiments are conducted with a plane electrode immersed in RF-driven argon plasmas. When negative, high voltage pulses are applied to the electrode, the current and voltage waveforms are measured and compared with the simulation results. Effects of internal circuit impedance as well as plasma properties on plasma recovery during pulse fall time are discussed based on the experimental and numerical results
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等离子体源离子注入中下降时间等离子体恢复的研究
为了研究高压脉冲下降时间内等离子体的恢复,在假设电子的热平衡的情况下,应用离子的流体方程建立了一个数值模型。该模型考虑了脉冲系统电路阻抗的影响。数值分析表明,等离子体的特性和脉冲系统的内部阻抗都对等离子体的恢复有影响。实验采用平面电极浸泡在射频驱动氩等离子体中进行。在对电极施加负高压脉冲时,测量了电流和电压波形,并与仿真结果进行了比较。在实验和数值结果的基础上,讨论了内部电路阻抗和等离子体特性对脉冲下降时间等离子体恢复的影响
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