S. Iwashita, H. Miyahara, K. Koga, M. Shiratani, S. Nunomura, M. Kondo
{"title":"Plasma CVD for Producing Si Quantum Dot Films","authors":"S. Iwashita, H. Miyahara, K. Koga, M. Shiratani, S. Nunomura, M. Kondo","doi":"10.1109/DEIV.2006.357362","DOIUrl":null,"url":null,"abstract":"Si quantum dot films are deposited using a multi-hollow discharge plasma CVD method. For the method, Si nano-crystallites of a small size dispersion and radicals are produced using H2+SiH4 VHF discharges, and then they are co-deposited on to a substrate to form Si quantum dot films, that is, a-Si:H films containing nano-crystallites. The films have a wide optical band gap of 1.8 eV and a large optical absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density below 1 times 1016 cm-3 and show high stability against light soaking. These results suggest that the Si quantum dot films are promising materials for solar cells","PeriodicalId":369861,"journal":{"name":"2006 International Symposium on Discharges and Electrical Insulation in Vacuum","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Symposium on Discharges and Electrical Insulation in Vacuum","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DEIV.2006.357362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Si quantum dot films are deposited using a multi-hollow discharge plasma CVD method. For the method, Si nano-crystallites of a small size dispersion and radicals are produced using H2+SiH4 VHF discharges, and then they are co-deposited on to a substrate to form Si quantum dot films, that is, a-Si:H films containing nano-crystallites. The films have a wide optical band gap of 1.8 eV and a large optical absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density below 1 times 1016 cm-3 and show high stability against light soaking. These results suggest that the Si quantum dot films are promising materials for solar cells
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