{"title":"Device transplant of optical MEMS for out of plane beam steering","authors":"H. Nguyen, John G. D. Su, H. Toshiyoshi, M. Wu","doi":"10.1109/MEMSYS.2001.906544","DOIUrl":null,"url":null,"abstract":"We report on a substantially improved process for which an array of optical MEMS devices (MOEMS) are batch transferred onto a quartz wafer such that through wafer beam scanning can be achieved. MEMS optical scanners are successfully fabricated, transferred, and actuated for out-of-plane beam steering. DC transfer curves of control devices on silicon and those transferred on quartz exhibit similar pull in voltages of 135 V and 142 V respectively. Similarly, resonance for control device peaked at 1.1 kHz while transferred devices exhibit higher resonance at 1.2 kHz.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2001.906544","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
We report on a substantially improved process for which an array of optical MEMS devices (MOEMS) are batch transferred onto a quartz wafer such that through wafer beam scanning can be achieved. MEMS optical scanners are successfully fabricated, transferred, and actuated for out-of-plane beam steering. DC transfer curves of control devices on silicon and those transferred on quartz exhibit similar pull in voltages of 135 V and 142 V respectively. Similarly, resonance for control device peaked at 1.1 kHz while transferred devices exhibit higher resonance at 1.2 kHz.
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