{"title":"High temperature performance of hybrid GaN/SiC high power diodes","authors":"M. Trivedi, K. Shenai","doi":"10.1109/HTEMDS.1998.730660","DOIUrl":null,"url":null,"abstract":"Wide bandgap semiconductors are being explored for use in high power, high temperature applications. It is difficult to find a single material that meets all requirements. Improved performance in high power rectification applications can be achieved by a novel hybrid device consisting of GaN and SiC epitaxial layers. This paper presents a simulation study of the electrical characteristics of such a device. The device exploits advantages of GaN and SiC diodes to achieve improved on-state and switching characteristics with better thermal handling capability.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HTEMDS.1998.730660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Wide bandgap semiconductors are being explored for use in high power, high temperature applications. It is difficult to find a single material that meets all requirements. Improved performance in high power rectification applications can be achieved by a novel hybrid device consisting of GaN and SiC epitaxial layers. This paper presents a simulation study of the electrical characteristics of such a device. The device exploits advantages of GaN and SiC diodes to achieve improved on-state and switching characteristics with better thermal handling capability.
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