High temperature stable metallization schemes for SiC-technology operating in air

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-02-22 DOI:10.1109/HTEMDS.1998.730691

K. Gottfried, J. Kříž, J. Leibelt, C. Kaufmann, T. Gessner

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引用次数: 5

Abstract

Complete metallization schemes for SiC based high temperature applications were investigated with regard to their physical and chemical stability, and their electrical behaviour under the influence of a high temperature air ambient. Two metal silicides, MoSi/sub 2/ and WSi/sub 2/, were used as contacts to the 6H-SiC substrate. MoSi/sub 2/ and WSi/sub 2/ show ohmic behaviour after thermal contact formation. The specific contact resistances obtained are in the range from 10/sup -4/ to 10/sup -5/ /spl Omega/ cm/sup 2/. To keep the system design simple for these investigations, both silicides were used for on-chip interconnects. The connection to the next wiring level was realized by an 3 /spl mu/m Al cover layer and Al thick wire bonding. All systems show electrically stable behaviour during thermal storage at 400/spl deg/C for more than 1000 hours. No intermixing or degradation within the systems was found by Auger electron spectroscopy depth profile analysis and electrical measurements.

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空气中sic工艺的高温稳定金属化方案

研究了SiC基高温应用的完整金属化方案在高温空气环境下的物理和化学稳定性以及电学行为。采用MoSi/sub 2/和WSi/sub 2/两种金属硅化物作为6H-SiC衬底的触点。MoSi/sub 2/和WSi/sub 2/在热接触形成后表现出欧姆行为。所获得的具体接触电阻范围为10/sup -4/至10/sup -5/ spl ω / cm/sup 2/。为了使这些研究的系统设计简单，这两种硅化物都用于片上互连。通过3 /spl μ m的铝覆盖层和铝粗线键合实现与下一接线层的连接。在400/spl度/C的温度下，所有系统都表现出超过1000小时的电稳定行为。通过俄歇电子能谱深度剖面分析和电气测量，未发现体系内的混合或降解。

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1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)

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