Long term behavior of passive components for high temperature applications-an update

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) Pub Date : 1998-06-14 DOI:10.1109/HTEMDS.1998.730694

R. Grzybowski

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引用次数: 9

Abstract

Advances in SOI IC technology and the development of wide band gap semiconductors such as SiC are enabling practical deployment of high temperature electronics. While ICs are key to the realization of complete high temperature electronic systems, passive components including resistors, capacitors, magnetics and crystals are also required. This paper presents a representative cross-section of high temperature passive component characterization data with an emphasis on long term drift behavior. The goal of this study was to accumulate of the order of 5000 hours of long term parametric drift data at 200/spl deg/C on a large variety of carefully selected, commercially available passive component technologies. Device types represented include both small signal and power resistors and capacitors, and some results obtained from a study of crystals for use in oscillators designed to operate in extended temperature applications from -55/spl deg/C to 200/spl deg/C. Specific problems encountered with the use of these devices in harsh environments are discussed for each family of components.

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用于高温应用的无源元件的长期行为-更新

SOI集成电路技术的进步和宽带隙半导体(如SiC)的发展使高温电子器件的实际部署成为可能。虽然集成电路是实现完整的高温电子系统的关键，但也需要包括电阻、电容器、磁性和晶体在内的无源元件。本文提出了一个具有代表性的高温无源元件表征数据的截面，重点是长期漂移行为。本研究的目标是在200/spl度/C下，在各种精心挑选的、市售的无源元件技术上积累5000小时的长期参数漂移数据。所代表的器件类型包括小信号和功率电阻和电容器，以及从用于振荡器的晶体研究中获得的一些结果，这些振荡器设计用于在-55/spl°C至200/spl°C的扩展温度应用中工作。讨论了在恶劣环境中使用这些设备时遇到的具体问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)

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