K. Joo, Changrok Moon, Sungnam Lee, Xiofeng Wang, J. Yang, I. Yeo, Duckhyung Lee, O. Nam, U. Chung, J. Moon, B. Ryu
{"title":"Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor","authors":"K. Joo, Changrok Moon, Sungnam Lee, Xiofeng Wang, J. Yang, I. Yeo, Duckhyung Lee, O. Nam, U. Chung, J. Moon, B. Ryu","doi":"10.1109/IEDM.2006.346950","DOIUrl":null,"url":null,"abstract":"ZnO or AlxGa1-xN charge trap device showed large memory window (>7V) with fast P/E speed (plusmn17 V, 100 (_is) and excellent retention (10-year memory window of 6 V with small charge loss rate; ~l/5 of that of Si3N4). GaN and ZnO trap devices also showed the photo-sensitive programming due to their optoelectronics properties, providing the possibility of developing new type of high performance image sensor (QE ~ 80%)","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
ZnO or AlxGa1-xN charge trap device showed large memory window (>7V) with fast P/E speed (plusmn17 V, 100 (_is) and excellent retention (10-year memory window of 6 V with small charge loss rate; ~l/5 of that of Si3N4). GaN and ZnO trap devices also showed the photo-sensitive programming due to their optoelectronics properties, providing the possibility of developing new type of high performance image sensor (QE ~ 80%)
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