{"title":"Alpha and Neutron SER of embedded-SRAM and Novel Estimation Method","authors":"T. Fukuda, S. Hayakawa, N. Shigyo","doi":"10.1109/VDAT.2006.258118","DOIUrl":null,"url":null,"abstract":"Alpha and neutron SERs of embedded-SRAMs are evaluated. From the results for several technology generations, SER is expressed as a function of diffusion area and critical charge for devices, but the effect of collection efficiency is constant for the generations. Then, the technology independent SER model named universal curve is introduced. Moreover, SER trend to 45nm generation is quantitatively estimated based on the future trend of device technology","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Symposium on VLSI Design, Automation and Test","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2006.258118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Alpha and neutron SERs of embedded-SRAMs are evaluated. From the results for several technology generations, SER is expressed as a function of diffusion area and critical charge for devices, but the effect of collection efficiency is constant for the generations. Then, the technology independent SER model named universal curve is introduced. Moreover, SER trend to 45nm generation is quantitatively estimated based on the future trend of device technology
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