I. Hirano, Y. Nakasaki, S. Fukatsu, Akiko Masada, Y. Mitani, M. Goto, K. Nagatomo, S. Inumiya, K. Sekine
{"title":"Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics","authors":"I. Hirano, Y. Nakasaki, S. Fukatsu, Akiko Masada, Y. Mitani, M. Goto, K. Nagatomo, S. Inumiya, K. Sekine","doi":"10.1109/IRPS.2009.5173278","DOIUrl":null,"url":null,"abstract":"The slope parameter of Weibull plot of Tbd, β, strongly depends on gate electrode material for metalgate/HfSiON gate stacks in n-FETs. Furthermore β of Tbd under bipolar stress is larger than that under DC stress. From these results, it is found that the balance of injected carriers is strongly related to β in terms of the origin of large β for metal-gate/high-k.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
The slope parameter of Weibull plot of Tbd, β, strongly depends on gate electrode material for metalgate/HfSiON gate stacks in n-FETs. Furthermore β of Tbd under bipolar stress is larger than that under DC stress. From these results, it is found that the balance of injected carriers is strongly related to β in terms of the origin of large β for metal-gate/high-k.
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