L. Yang, K. Carey, M. Ludowise, W. Perez, D. Mars, J. Fouquet, K. Nauka, S. J. Rosner, Rajeev J Ram, J. J. Dudley, D. Babic, J. Bowers
{"title":"Wafer bonding of InP and GaAs: interface characterization and device applications","authors":"L. Yang, K. Carey, M. Ludowise, W. Perez, D. Mars, J. Fouquet, K. Nauka, S. J. Rosner, Rajeev J Ram, J. J. Dudley, D. Babic, J. Bowers","doi":"10.1109/ICIPRM.1994.328200","DOIUrl":null,"url":null,"abstract":"Wafer bonding is a technique used to form a single hybrid solid from dissimilar materials by rearrangement of surface bonds. While the bonding of silicon-related material has been studied extensively, very little work was devoted to the III-V material system. We have successfully bonded InP and GaAs. In spite of the 3.7% lattice-mismatch, excellent material quality can be preserved less than 0.2 /spl mu/m away from the bonded interface. Transmission electron micrograph (TEM), deep level transient spectroscopy (DLTS), electron beam induced current (EBIC), photoluminescence (PL) and optical reflection measurements were used to characterize the bonded interface, and consistent results were obtained.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Wafer bonding is a technique used to form a single hybrid solid from dissimilar materials by rearrangement of surface bonds. While the bonding of silicon-related material has been studied extensively, very little work was devoted to the III-V material system. We have successfully bonded InP and GaAs. In spite of the 3.7% lattice-mismatch, excellent material quality can be preserved less than 0.2 /spl mu/m away from the bonded interface. Transmission electron micrograph (TEM), deep level transient spectroscopy (DLTS), electron beam induced current (EBIC), photoluminescence (PL) and optical reflection measurements were used to characterize the bonded interface, and consistent results were obtained.<>
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