A. Freundlich, A. Bensaoula, A. Bensaoula, V. Rossignol
{"title":"InP/GaAs/GaP/GaAs short period superlattices grown by chemical beam epitaxy","authors":"A. Freundlich, A. Bensaoula, A. Bensaoula, V. Rossignol","doi":"10.1109/ICIPRM.1993.380577","DOIUrl":null,"url":null,"abstract":"The growth of a new type of pseudomorphically strained layer superlattice is investigated. InP(n)/GaAs(m)/GaP(n)/GaAs(m) superlattices with n=1 to 4 monolayers and m=4 to 40 monolayers were grown using chemical beam epitaxy on GaAs substrates. Perfectly strain balanced InP(n)/GaAs(m)/GaP(n)/ GaAs(m) superlattices with n=4 monolayers were realized. The global mismatch introduced by 50 period In(4)/GaAs(4)/GaP(4)/GaAs(4) superlattices is below 2/spl times/10/sup -3/ and superlattice satellite peaks are clearly observed in the diffraction patterns, demonstrating that chemical beam epitaxy is perfectly suited for realization of such strain balanced short superlattices.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The growth of a new type of pseudomorphically strained layer superlattice is investigated. InP(n)/GaAs(m)/GaP(n)/GaAs(m) superlattices with n=1 to 4 monolayers and m=4 to 40 monolayers were grown using chemical beam epitaxy on GaAs substrates. Perfectly strain balanced InP(n)/GaAs(m)/GaP(n)/ GaAs(m) superlattices with n=4 monolayers were realized. The global mismatch introduced by 50 period In(4)/GaAs(4)/GaP(4)/GaAs(4) superlattices is below 2/spl times/10/sup -3/ and superlattice satellite peaks are clearly observed in the diffraction patterns, demonstrating that chemical beam epitaxy is perfectly suited for realization of such strain balanced short superlattices.<>
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