Nickel Silicide Electromigration on Micro Ring Modulators for Silicon Photonics Technology

B. McGowan, M. Rakowski, Seungman Choi
{"title":"Nickel Silicide Electromigration on Micro Ring Modulators for Silicon Photonics Technology","authors":"B. McGowan, M. Rakowski, Seungman Choi","doi":"10.1109/IRPS48203.2023.10118191","DOIUrl":null,"url":null,"abstract":"Electromigration (EM) tests were performed on NiSi silicide heaters that are part of a photonic micro ring modulator (MRM). Measurement of the temperature kinetics of failure suggests an activation energy close to 2.0eV. Failure analyses confirm Ni migration is the failure mechanism. Reliability limits established by the EM tests combined with characterization of the MRM's temperature response quantifies the tradeoffs between device performance and reliability.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"427 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10118191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Electromigration (EM) tests were performed on NiSi silicide heaters that are part of a photonic micro ring modulator (MRM). Measurement of the temperature kinetics of failure suggests an activation energy close to 2.0eV. Failure analyses confirm Ni migration is the failure mechanism. Reliability limits established by the EM tests combined with characterization of the MRM's temperature response quantifies the tradeoffs between device performance and reliability.
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硅光子学微环调制器上的硅化镍电迁移
对作为光子微环调制器(MRM)一部分的NiSi硅化物加热器进行了电迁移(EM)测试。对失效温度动力学的测量表明,其活化能接近2.0eV。失效分析证实Ni迁移是失效机制。电磁测试建立的可靠性限制与MRM的温度响应特性相结合,量化了设备性能和可靠性之间的权衡。
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