Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing
G. Wilk, M. Green, M. Ho, B. Busch, T. Sorsch, F. Klemens, B. Brijs, R. V. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, J. Hergenrother
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引用次数: 26
Abstract
We demonstrate for the first time that chemical oxide underlayers /spl sim/5 /spl Aring/ thick provide improved growth and flatband voltage control of ALD HfO/sub 2/ films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-/spl kappa/ stacks. Extremely small flatband voltage shifts of <30 mV are achieved, corresponding to a very low fixed charge of Q/sub f//spl sim/2E11/cm/sup 2/.
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