A Seamless Ultra-Thin Chip Fabrication and Assembly Process

M. Zimmermann, J. Burghartz, W. Appel, N. Remmers, C. Burwick, R. Wurz, O. Tobail, M. Schubert, G. Palfinger, J. Werner
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引用次数: 34

Abstract

Various new applications of silicon technology, such as 3D circuit integration (Patti, 2006), system-on-chip (SoC), system-in-package (SiP), and electronics on foil or textile (Sanda et al.,2005), call for low-cost manufacturing and assembly of ultra-thin chips (5-50 mum). Practically all currently pursued concepts for fabricating thin chips are based on post-process thinning at wafer level, which, at thickness <50 mum, require application of a costly handle substrate. Also, grinding techniques applied to very thin wafers may lead to defect formation, thickness non-uniformity (wedging), and wafer fracture, thus causing yield loss and leading to high cost at this late stage of manufacture (Feil et al., 204). The paper proposed a new concept based on thin-chip fabrication by wafer pre-processing prior to the CMOS integration instead of post-process thinning of the entire wafer. There, the conventional chip dicing is replaced by a novel Pick, Crack & Placetrade process, through which the thin chip fabrication and assembly processes are seamlessly connected
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一种无缝超薄芯片制造与组装工艺
硅技术的各种新应用,如3D电路集成(Patti, 2006)、系统级芯片(SoC)、系统级封装(SiP)和箔或纺织品上的电子产品(Sanda等人,2005),要求超薄芯片(5-50微米)的低成本制造和组装。实际上,目前所有制造薄芯片的概念都是基于晶圆级的后处理减薄,在厚度<50微米时,需要应用昂贵的手柄基板。此外,应用于极薄晶圆的研磨技术可能导致缺陷形成、厚度不均匀(楔入)和晶圆断裂,从而导致良率损失,并导致制造后期的高成本(Feil等人,204)。本文提出了一种新的概念,即在CMOS集成之前对晶圆进行预处理,而不是对整个晶圆进行后期减薄。在那里,传统的芯片切割被一种新颖的“挑、裂、放”工艺所取代,通过这种工艺,薄芯片的制造和组装过程可以无缝连接
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