M. Zimmermann, J. Burghartz, W. Appel, N. Remmers, C. Burwick, R. Wurz, O. Tobail, M. Schubert, G. Palfinger, J. Werner
{"title":"A Seamless Ultra-Thin Chip Fabrication and Assembly Process","authors":"M. Zimmermann, J. Burghartz, W. Appel, N. Remmers, C. Burwick, R. Wurz, O. Tobail, M. Schubert, G. Palfinger, J. Werner","doi":"10.1109/IEDM.2006.346787","DOIUrl":null,"url":null,"abstract":"Various new applications of silicon technology, such as 3D circuit integration (Patti, 2006), system-on-chip (SoC), system-in-package (SiP), and electronics on foil or textile (Sanda et al.,2005), call for low-cost manufacturing and assembly of ultra-thin chips (5-50 mum). Practically all currently pursued concepts for fabricating thin chips are based on post-process thinning at wafer level, which, at thickness <50 mum, require application of a costly handle substrate. Also, grinding techniques applied to very thin wafers may lead to defect formation, thickness non-uniformity (wedging), and wafer fracture, thus causing yield loss and leading to high cost at this late stage of manufacture (Feil et al., 204). The paper proposed a new concept based on thin-chip fabrication by wafer pre-processing prior to the CMOS integration instead of post-process thinning of the entire wafer. There, the conventional chip dicing is replaced by a novel Pick, Crack & Placetrade process, through which the thin chip fabrication and assembly processes are seamlessly connected","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 34
Abstract
Various new applications of silicon technology, such as 3D circuit integration (Patti, 2006), system-on-chip (SoC), system-in-package (SiP), and electronics on foil or textile (Sanda et al.,2005), call for low-cost manufacturing and assembly of ultra-thin chips (5-50 mum). Practically all currently pursued concepts for fabricating thin chips are based on post-process thinning at wafer level, which, at thickness <50 mum, require application of a costly handle substrate. Also, grinding techniques applied to very thin wafers may lead to defect formation, thickness non-uniformity (wedging), and wafer fracture, thus causing yield loss and leading to high cost at this late stage of manufacture (Feil et al., 204). The paper proposed a new concept based on thin-chip fabrication by wafer pre-processing prior to the CMOS integration instead of post-process thinning of the entire wafer. There, the conventional chip dicing is replaced by a novel Pick, Crack & Placetrade process, through which the thin chip fabrication and assembly processes are seamlessly connected