J. Buckley, M. Bocquet, G. Molas, M. Gely, P. Brianceau, N. Rochat, E. Martinez, F. Martin, H. Grampeix, J. Colonna, A. Toffoli, V. Vidal, C. Leroux, G. Ghibaudo, G. Pananakakis, C. Bongiorno, D. Corso, S. Lombardo, B. Desalvo, S. Deleonibus
{"title":"In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap NVMs","authors":"J. Buckley, M. Bocquet, G. Molas, M. Gely, P. Brianceau, N. Rochat, E. Martinez, F. Martin, H. Grampeix, J. Colonna, A. Toffoli, V. Vidal, C. Leroux, G. Ghibaudo, G. Pananakakis, C. Bongiorno, D. Corso, S. Lombardo, B. Desalvo, S. Deleonibus","doi":"10.1109/IEDM.2006.347010","DOIUrl":null,"url":null,"abstract":"In this paper, different Hf-based oxides (HfO2, HfSiO under several annealing conditions, HfSiON, HfAlO with various compositions) are simultaneously considered as storage layers of charge-trap memories. Based on material characterization analyses, electrical data of memory cells, physical modeling of charge-trap devices, we show that a strict relationship exists between the crystal structure of the storage layer and the memory performances. The obtained results clearly demonstrate the high interest of HfO2 dielectric as possible storage layer of future NROM-like memory devices","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.347010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
In this paper, different Hf-based oxides (HfO2, HfSiO under several annealing conditions, HfSiON, HfAlO with various compositions) are simultaneously considered as storage layers of charge-trap memories. Based on material characterization analyses, electrical data of memory cells, physical modeling of charge-trap devices, we show that a strict relationship exists between the crystal structure of the storage layer and the memory performances. The obtained results clearly demonstrate the high interest of HfO2 dielectric as possible storage layer of future NROM-like memory devices
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
