High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates
Y. Tateshita, J. Wang, K. Nagano, T. Hirano, Y. Miyanami, T. Ikuta, T. Kataoka, Y. Kikuchi, S. Yamaguchi, T. Ando, K. Tai, R. Matsumoto, S. Fujita, C. Yamane, R. Yamamoto, S. Kanda, K. Kugimiya, T. Kimura, T. Ohchi, Y. Yamamoto, Y. Nagahama, Y. Hagimoto, H. Wakabayashi, Y. Tagawa, M. Tsukamoto, H. Iwamoto, M. Saito, S. Kadomura, N. Nagashima
{"title":"High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates","authors":"Y. Tateshita, J. Wang, K. Nagano, T. Hirano, Y. Miyanami, T. Ikuta, T. Kataoka, Y. Kikuchi, S. Yamaguchi, T. Ando, K. Tai, R. Matsumoto, S. Fujita, C. Yamane, R. Yamamoto, S. Kanda, K. Kugimiya, T. Kimura, T. Ohchi, Y. Yamamoto, Y. Nagahama, Y. Hagimoto, H. Wakabayashi, Y. Tagawa, M. Tsukamoto, H. Iwamoto, M. Saito, S. Kadomura, N. Nagashima","doi":"10.1109/IEDM.2006.346959","DOIUrl":null,"url":null,"abstract":"CMOS technologies using metal/high-k damascene gate stacks with uniaxial strained silicon channels were developed. Gate electrodes of HfSix and TiN were applied to nFETs and pFETs, respectively. TiN/HfO2 damascene gate stacks and epitaxial SiGe source/drains were successfully integrated for the first time. As a result, drive currents of 1050 and 710 muA/mum at Vdd=l V, Ioff=100 nA/um and Tinv=1.6 nm were obtained for the nFETs and pFETs. The further integration of pFETs on (110) substrates contributed to a higher drive current of 830 muA/mum. These performances were realized under low gate leakage currents of 0.03 A/cm2 and below","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
CMOS technologies using metal/high-k damascene gate stacks with uniaxial strained silicon channels were developed. Gate electrodes of HfSix and TiN were applied to nFETs and pFETs, respectively. TiN/HfO2 damascene gate stacks and epitaxial SiGe source/drains were successfully integrated for the first time. As a result, drive currents of 1050 and 710 muA/mum at Vdd=l V, Ioff=100 nA/um and Tinv=1.6 nm were obtained for the nFETs and pFETs. The further integration of pFETs on (110) substrates contributed to a higher drive current of 830 muA/mum. These performances were realized under low gate leakage currents of 0.03 A/cm2 and below
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