M.C. Heimlich, R.J. Gutmanna, L. Kerber, S. Moreau, J. Vaughan
{"title":"Characterization of active channel processing by PIMR","authors":"M.C. Heimlich, R.J. Gutmanna, L. Kerber, S. Moreau, J. Vaughan","doi":"10.1109/SIM.1992.752714","DOIUrl":null,"url":null,"abstract":"Photo-Induced Microwave Reflectometry (PIMR) is used to study three different aspects of implanted channel technology. In the first experiment, implant channeling is introduced into wafers from two separate boules by varying the implant rotation angle. Sheet resistance, after furnace annealing, and bulk defect data determined by PIMR indicate boule-to-boule variations consistent with a stoichiometrically constrained activation model involving bulk EL2 and boron concentrations. The second experiment focuses on the effect of nitride capped RTA on a set of implanted and unimplanted adjacent wafers from a single boule. These PIMR data show the RTA temperature dependence of several phenomena, such as channel activation, bulk point defect reactions, and subchannel defect evolution. In the final experiment, a comparison between similar boron and silicon implants reveals that a measure of activation occurs prior to any high temperature processing.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752714","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Photo-Induced Microwave Reflectometry (PIMR) is used to study three different aspects of implanted channel technology. In the first experiment, implant channeling is introduced into wafers from two separate boules by varying the implant rotation angle. Sheet resistance, after furnace annealing, and bulk defect data determined by PIMR indicate boule-to-boule variations consistent with a stoichiometrically constrained activation model involving bulk EL2 and boron concentrations. The second experiment focuses on the effect of nitride capped RTA on a set of implanted and unimplanted adjacent wafers from a single boule. These PIMR data show the RTA temperature dependence of several phenomena, such as channel activation, bulk point defect reactions, and subchannel defect evolution. In the final experiment, a comparison between similar boron and silicon implants reveals that a measure of activation occurs prior to any high temperature processing.
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