MTJ-based "normally-off processors" with thermal stability factor engineered perpendicular MTJ, L2 cache based on 2T-2MTJ cell, L3 and last level cache based on 1T-1MTJ cell and novel error handling scheme

K. Ikegami, H. Noguchi, S. Takaya, C. Kamata, M. Amano, K. Abe, K. Kushida, E. Kitagawa, T. Ochiai, N. Shimomura, D. Saida, A. Kawasumi, H. Hara, J. Ito, S. Fujita
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引用次数: 12

Abstract

MTJ-based cache memory is expected to reduce processor power significantly. However, write energy increases rapidly for high speed operation and considered not suited for lower level cache memory. In this work, we have developed L2 and L3 cache memory based on thermal stability factor engineered pMTJ with 2T-2MTJ and 1T-1MTJ memory cell and novel error handling scheme. These techniques reduce 75% energy with 2% performance overhead compared to SRAM-based l2 and L3 cache memory.
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基于热稳定因子MTJ的“常关处理器”设计了垂直MTJ,基于2T-2MTJ单元的L2缓存,基于1T-1MTJ单元的L3和最后一级缓存以及新颖的错误处理方案
基于mtj的高速缓存有望显著降低处理器功耗。然而,对于高速操作,写入能量会迅速增加,因此不适合低级缓存存储器。在这项工作中,我们开发了基于热稳定因子设计的pMTJ和2T-2MTJ和1T-1MTJ存储单元以及新的错误处理方案的L2和L3高速缓存。与基于sram的l2和L3高速缓存相比,这些技术减少了75%的能量和2%的性能开销。
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