{"title":"Experimental study on carrier transport properties in extremely-thin body Ge-on-insulator (GOI) p-MOSFETs with GOI thickness down to 2 nm","authors":"Xiao Yu, Jian Kang, M. Takenaka, S. Takagi","doi":"10.1109/IEDM.2015.7409611","DOIUrl":null,"url":null,"abstract":"In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the hole mobility and the GOI thickness dependence over a wide range of GOI thickness down to 2 nm are systematically analyzed and understood from the viewpoint of the scattering mechanisms, for the first time.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 30
Abstract
In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the hole mobility and the GOI thickness dependence over a wide range of GOI thickness down to 2 nm are systematically analyzed and understood from the viewpoint of the scattering mechanisms, for the first time.
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