High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes

Abstract

For high power full SiC modules, the application requires highly reliable and robust 4H-SiC diodes in parallel with SiC MOSFETs. This work introduces new large size (50A rated) 1200V and 1700V 4H-SiC diodes which exhibit excellent performance under high temperature reverse bias (HTRB) and high voltage high temperature humidity (HV -H3TRB) conditions without sacrificing critical device performance such as forward voltage dropr $\mathbf{(Vf)}$, Schottky Barrier height and ideality factor, and reverse leakage current. In this work, we have improved the device integration scheme for diode manufacturing, which enabled the successful completion of HTRB and HV-H3TRB qualification for automotive application.