{"title":"Semi-insulating InP:Fe by GSMBE: Optimal growth conditions","authors":"S. Salaun, A. Le Corre, M. Gauneau, D. Lecrosnier","doi":"10.1109/ICIPRM.1993.380688","DOIUrl":null,"url":null,"abstract":"The authors studied the quality of gas source molecular beam epitaxy (GSMBE) InP:Fe epitaxial layers as a function of growth conditions using secondary ion mass spectroscopy and resistivity measurements. Varying the growth temperature and the phosphine (PH/sub 3/) flow rate allows control of the atom surface mobility during growth, hence permitting decrease of the interactions between iron atoms, to improve their incorporation in the InP layers. For optimized growth conditions, a semi-insulating behavior of GSMBE InP:Fe epitaxial layers is demonstrated with resistivities in excess of 10/sup 8/ /spl Omega/.cm for an iron concentration above 10/sup 17/ cm/sup -3/.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The authors studied the quality of gas source molecular beam epitaxy (GSMBE) InP:Fe epitaxial layers as a function of growth conditions using secondary ion mass spectroscopy and resistivity measurements. Varying the growth temperature and the phosphine (PH/sub 3/) flow rate allows control of the atom surface mobility during growth, hence permitting decrease of the interactions between iron atoms, to improve their incorporation in the InP layers. For optimized growth conditions, a semi-insulating behavior of GSMBE InP:Fe epitaxial layers is demonstrated with resistivities in excess of 10/sup 8/ /spl Omega/.cm for an iron concentration above 10/sup 17/ cm/sup -3/.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
