R. Nieh, S. Krishnan, Hag-ju Cho, C. Kang, S. Gopalan, K. Onishi, R. Choi, J.C. Lee
{"title":"Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices","authors":"R. Nieh, S. Krishnan, Hag-ju Cho, C. Kang, S. Gopalan, K. Onishi, R. Choi, J.C. Lee","doi":"10.1109/VLSIT.2002.1015445","DOIUrl":null,"url":null,"abstract":"Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO/sub 2/ and nitrogen-incorporated ZrO/sub 2/ (ZrO/sub x/N/sub y/) gate dielectrics (EOT/spl sim/10.3/spl Aring/). ZrO/sub x/N/sub y/ devices demonstrated excellent thermal stability, comparable leakage current, higher breakdown field, decreased subthreshold swing, and improved drive current over ZrO/sub x/ devices. Polysilicon-gated NMOSCAPs were also fabricated to investigate the compatibility of ZrO/sub x/N/sub y/ with the poly process (EOT/spl sim/19/spl Aring/), but high leakage and TEM analysis revealed interaction between the poly and ZrO/sub x/N/sub y/.","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO/sub 2/ and nitrogen-incorporated ZrO/sub 2/ (ZrO/sub x/N/sub y/) gate dielectrics (EOT/spl sim/10.3/spl Aring/). ZrO/sub x/N/sub y/ devices demonstrated excellent thermal stability, comparable leakage current, higher breakdown field, decreased subthreshold swing, and improved drive current over ZrO/sub x/ devices. Polysilicon-gated NMOSCAPs were also fabricated to investigate the compatibility of ZrO/sub x/N/sub y/ with the poly process (EOT/spl sim/19/spl Aring/), but high leakage and TEM analysis revealed interaction between the poly and ZrO/sub x/N/sub y/.
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